Role of Ga vacancies in enhancing the leakage current of GaN Schottky barrier ultraviolet photodetectors
Zhao, DG; Zhang, S; Liu, WB; Hao, XP; Jiang, DS; Zhu, JJ; Liu, ZS; Wang, H; Zhang, SM; Yang, H; Wei, L; Wei L(魏龙)
刊名CHINESE PHYSICS B
2010
卷号19期号:5页码:57802
关键词Ga vacancies MOCVD GaN Schottky barrier photodetector
学科分类Physics
DOI10.1088/1674-1056/19/5/057802
通讯作者[Zhao De-Gang ; Zhang Shuang ; Liu Wen-Bao ; Jiang De-Sheng ; Zhu Jian-Jun ; Liu Zong-Shun ; Wang Hui ; Zhang Shu-Ming ; Yang Hui] Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China ; [Hao Xiao-Peng] Natl Inst Metrol, Beijing 100013, Peoples R China ; [Wei Long] Chinese Acad Sci, Inst High Energy Phys, Beijing 100039, Peoples R China
文章类型Article
英文摘要The leakage current of GaN Schottky barrier ultraviolet photodetectors is investigated. It is found that the photodetectors adopting undoped GaN instead of lightly Si-doped GaN as an active layer show a much lower leakage current even when they have a higher dislocation density. It is also found that the density of Ga vacancies in undoped GaN is much lower than in Si-doped GaN. The Ga vacancies may enhance tunneling and reduce effective Schottky barrier height, leading to an increase of leakage current. It suggests that when undoped GaN is used as the active layer, it is necessary to reduce the leakage current of GaN Schottky barrier ultraviolet photodetector.
类目[WOS]Physics, Multidisciplinary
研究领域[WOS]Physics
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语种英语
WOS记录号WOS:000277372200084
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被引频次:7[WOS]   [WOS记录]     [WOS相关记录]
文献类型期刊论文
条目标识符http://ir.ihep.ac.cn/handle/311005/240707
专题中国科学院高能物理研究所_核技术应用研究中心_期刊论文
作者单位中国科学院高能物理研究所
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Zhao, DG,Zhang, S,Liu, WB,et al. Role of Ga vacancies in enhancing the leakage current of GaN Schottky barrier ultraviolet photodetectors[J]. CHINESE PHYSICS B,2010,19(5):57802.
APA Zhao, DG.,Zhang, S.,Liu, WB.,Hao, XP.,Jiang, DS.,...&魏龙.(2010).Role of Ga vacancies in enhancing the leakage current of GaN Schottky barrier ultraviolet photodetectors.CHINESE PHYSICS B,19(5),57802.
MLA Zhao, DG,et al."Role of Ga vacancies in enhancing the leakage current of GaN Schottky barrier ultraviolet photodetectors".CHINESE PHYSICS B 19.5(2010):57802.
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