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Role of Ga vacancies in enhancing the leakage current of GaN Schottky barrier ultraviolet photodetectors
Zhao, DG; Zhang, S; Liu, WB; Hao, XP; Jiang, DS; Zhu, JJ; Liu, ZS; Wang, H; Zhang, SM; Yang, H; Wei, L; Wei L(魏龙)
2010
发表期刊CHINESE PHYSICS B
卷号19期号:5页码:57802
通讯作者[Zhao De-Gang ; Zhang Shuang ; Liu Wen-Bao ; Jiang De-Sheng ; Zhu Jian-Jun ; Liu Zong-Shun ; Wang Hui ; Zhang Shu-Ming ; Yang Hui] Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China ; [Hao Xiao-Peng] Natl Inst Metrol, Beijing 100013, Peoples R China ; [Wei Long] Chinese Acad Sci, Inst High Energy Phys, Beijing 100039, Peoples R China
文章类型Article
摘要The leakage current of GaN Schottky barrier ultraviolet photodetectors is investigated. It is found that the photodetectors adopting undoped GaN instead of lightly Si-doped GaN as an active layer show a much lower leakage current even when they have a higher dislocation density. It is also found that the density of Ga vacancies in undoped GaN is much lower than in Si-doped GaN. The Ga vacancies may enhance tunneling and reduce effective Schottky barrier height, leading to an increase of leakage current. It suggests that when undoped GaN is used as the active layer, it is necessary to reduce the leakage current of GaN Schottky barrier ultraviolet photodetector.
关键词Ga vacancies MOCVD GaN Schottky barrier photodetector
学科领域Physics
研究领域[WOS]Physics ; Physics
DOI10.1088/1674-1056/19/5/057802
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语种英语
研究领域[WOS]Physics ; Physics
WOS类目Physics, Multidisciplinary
WOS记录号WOS:000277372200084
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文献类型期刊论文
条目标识符http://ir.ihep.ac.cn/handle/311005/240707
专题核技术应用研究中心
作者单位中国科学院高能物理研究所
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GB/T 7714
Zhao, DG,Zhang, S,Liu, WB,et al. Role of Ga vacancies in enhancing the leakage current of GaN Schottky barrier ultraviolet photodetectors[J]. CHINESE PHYSICS B,2010,19(5):57802.
APA Zhao, DG.,Zhang, S.,Liu, WB.,Hao, XP.,Jiang, DS.,...&魏龙.(2010).Role of Ga vacancies in enhancing the leakage current of GaN Schottky barrier ultraviolet photodetectors.CHINESE PHYSICS B,19(5),57802.
MLA Zhao, DG,et al."Role of Ga vacancies in enhancing the leakage current of GaN Schottky barrier ultraviolet photodetectors".CHINESE PHYSICS B 19.5(2010):57802.
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