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Defects in Si-Rich SiO2 Films Prepared by Radio-Frequency Magnetron Co-sputtering Using Variable Energy Positron Annihilation Spectroscopy
Hao, XP; Zhou, CL; Wang, BY; Wei, L
2009
发表期刊CHINESE PHYSICS LETTERS
卷号26期号:4页码:46101
通讯作者[Hao Xiao-Peng] Natl Inst Metrol, Div Thermometry & Mat Evaluat, Beijing 100013, Peoples R China ; [Wang Bao-Yi ; Wei Long] Chinese Acad Sci, Inst High Energy Phys, Beijing 100049, Peoples R China ; [Zhou Chun-Lan] Chinese Acad Sci, Inst Elect Engn, Beijing 100190, Peoples R China
文章类型Article
摘要Si-rich SiO2 films prepared by rf magnetron co-sputtering method are studied by slow positron beams. The negatively charge point defects (probably P-b centres or peroxy radicals) at the silicon nanocluster (nc-Si)/SiO2 interface are observed by Doppler broadening spectra. Coincidence Doppler-broadening spectra show that positrons have a higher annihilation probability with core electrons nearby oxygen atoms than silicon atoms. The formation of N-related bonds may be the reason for the prevention of the migration reaction of Si and O atoms, hence nc-Si formation is inhibited by annealing in nitrogen compared to in vacuum.
学科领域Physics
研究领域[WOS]Physics ; Physics
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语种英语
研究领域[WOS]Physics ; Physics
WOS类目Physics, Multidisciplinary
WOS记录号WOS:000264746800045
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被引频次:2[WOS]   [WOS记录]     [WOS相关记录]
文献类型期刊论文
条目标识符http://ir.ihep.ac.cn/handle/311005/240632
专题多学科研究中心
作者单位中国科学院高能物理研究所
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Hao, XP,Zhou, CL,Wang, BY,et al. Defects in Si-Rich SiO2 Films Prepared by Radio-Frequency Magnetron Co-sputtering Using Variable Energy Positron Annihilation Spectroscopy[J]. CHINESE PHYSICS LETTERS,2009,26(4):46101.
APA Hao, XP,Zhou, CL,Wang, BY,&Wei, L.(2009).Defects in Si-Rich SiO2 Films Prepared by Radio-Frequency Magnetron Co-sputtering Using Variable Energy Positron Annihilation Spectroscopy.CHINESE PHYSICS LETTERS,26(4),46101.
MLA Hao, XP,et al."Defects in Si-Rich SiO2 Films Prepared by Radio-Frequency Magnetron Co-sputtering Using Variable Energy Positron Annihilation Spectroscopy".CHINESE PHYSICS LETTERS 26.4(2009):46101.
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