Effect of Anode Floating Voltage and its Applications in Characterizing Silicon Drift Detectors
Wu, GG; Li, HR; Liang, K; Yang, R; Cao, XL; Wang, HY; An, JM; Hu, XW; Han, DJ; Cao XL(曹学蕾); Wang HY(王焕玉)
刊名CHINESE PHYSICS LETTERS
2009
卷号26期号:4页码:42901
学科分类Physics
通讯作者[Wu Guang-Guo ; Li Hong-Ri ; Liang Kun ; Yang Ru ; Han De-Jun] Beijing Normal Univ, Coll Nucl Sci & Technol, Key Lab Beam Technol & Mat Modificat, Minist Educ, Beijing 100875, Peoples R China ; [Cao Xue-Lei ; Wang Huan-Yu] Chinese Acad Sci, Inst High Energy Phys, Beijing 100049, Peoples R China ; [An Jun-Ming ; Hu Xiong-Wei] Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China
文章类型Article
英文摘要Anode floating voltage is predicted and investigated for silicon drift detectors (SDDs) with an active area of 5 mm(2) fabricated by a double-side parallel technology. It is demonstrated that the anode floating voltage increases with the increasing inner ring voltage, and is almost unchanged with the external ring voltage. The anode floating voltage will not be affected by the back electrode biased voltage until it reaches the full-depleted voltage (-50 V) of the SDD. Theoretical analysis and experimental results show that the anode floating voltage is equal to the sum of the inner ring voltage and the built-in potential between the p(+) inner ring and the n(+) anode. A fast checking method before detector encapsulation is proposed by employing the anode floating voltage along with checking the leakage current, potential distribution and drift properties.
类目[WOS]Physics, Multidisciplinary
研究领域[WOS]Physics
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语种英语
WOS记录号WOS:000264746800022
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文献类型期刊论文
条目标识符http://ir.ihep.ac.cn/handle/311005/240609
专题中国科学院高能物理研究所_粒子天体物理中心_期刊论文
中国科学院高能物理研究所_粒子天体物理中心
作者单位中国科学院高能物理研究所
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GB/T 7714
Wu, GG,Li, HR,Liang, K,et al. Effect of Anode Floating Voltage and its Applications in Characterizing Silicon Drift Detectors[J]. CHINESE PHYSICS LETTERS,2009,26(4):42901.
APA Wu, GG.,Li, HR.,Liang, K.,Yang, R.,Cao, XL.,...&王焕玉.(2009).Effect of Anode Floating Voltage and its Applications in Characterizing Silicon Drift Detectors.CHINESE PHYSICS LETTERS,26(4),42901.
MLA Wu, GG,et al."Effect of Anode Floating Voltage and its Applications in Characterizing Silicon Drift Detectors".CHINESE PHYSICS LETTERS 26.4(2009):42901.
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