[Zuo, Z. W.
; Guan, W. T.
; Wang, Y.
; Lu, J.
; Wang, J. Z.
; Pu, L.
; Shi, Y.
; Zheng, Y. D.] Nanjing Univ, Sch Elect Sci & Engn, Key Lab Photon & Elect Mat, Nanjing 210093, Peoples R China
; [Luo, X. Y.
; Wang, H. H.] Inst High Energy Phys, Beijing Synchrotron Radiat Lab, Beijing 100049, Peoples R China
Microstructures of phosphorus-doped hydrogenated microcrystalline silicon (mu c-Si:H) thin films deposited by plasma-enhanced chemical vapor deposition are certainly dependent on the thickness of the H-2 plasma-treated amorphous silicon (a-Si:H) layers. An ultrathin H-treated a-Si:H layer is beneficial in obtaining a very thin mu c-Si:H film with high conductivity. Experimental results indicate that H-2 plasma treatment induces the occurrence of high-pressure H-2 in microvoids and causes compressive stress inside the ultrathin a-Si:H layers, thereby enhancing the generation of strained Si-Si bonds and nucleation sites and consequently accelerating the nucleation of mu c-Si:H films. (c) 2011 American Institute of Physics. [doi:10.1063/1.3548674]
Zuo, ZW,Guan, WT,Wang, Y,et al. Influence of ultrathin amorphous silicon layers on the nucleation of microcrystalline silicon films under hydrogen plasma treatment[J]. APPLIED PHYSICS LETTERS,2011,98(4):41902.
Zuo, ZW.,Guan, WT.,Wang, Y.,Lu, J.,Wang, JZ.,...&王焕华.(2011).Influence of ultrathin amorphous silicon layers on the nucleation of microcrystalline silicon films under hydrogen plasma treatment.APPLIED PHYSICS LETTERS,98(4),41902.
Zuo, ZW,et al."Influence of ultrathin amorphous silicon layers on the nucleation of microcrystalline silicon films under hydrogen plasma treatment".APPLIED PHYSICS LETTERS 98.4(2011):41902.