Different origins of the yellow luminescence in as-grown high-resistance GaN and unintentional-doped GaN films
Xu, FJ; Shen, B; Lu, L; Miao, ZL; Song, J; Yang, ZJ; Zhang, GY; Hao, XP; Wang, BY; Shen, XQ; Okumura, H; Hao XP(郝小鹏); Wang BY(王宝义)
刊名JOURNAL OF APPLIED PHYSICS
2010
卷号107期号:2页码:23528
关键词gallium compounds III-V semiconductors MOCVD photoluminescence positron annihilation vacancies (crystal) wide band gap semiconductors
学科分类Physics
DOI10.1063/1.3294965
通讯作者[Xu, F. J. ; Shen, B. ; Lu, L. ; Miao, Z. L. ; Song, J. ; Yang, Z. J. ; Zhang, G. Y.] Peking Univ, State Key Lab Artificial Microstruct & Mesoscop P, Beijing 100871, Peoples R China ; [Hao, X. P. ; Wang, B. Y.] Chinese Acad Sci, Inst High Energy Phys, Beijing 100039, Peoples R China ; [Shen, X. Q. ; Okumura, H.] Natl Inst Adv Ind Sci & Technol, Power Elect Res Ctr, Tsukuba, Ibaraki 3058568, Japan
文章类型Article
英文摘要The yellow luminescence (YL) in as-grown high-resistance (HR) and unintentional-doped (UID) GaN films grown by metal organic chemical vapor deposition has been investigated by means of photoluminescence and monoenergetic positron annihilation spectroscopy. It is found there is stronger YL in UID-GaN with higher concentration of gallium vacancy (V(Ga)), suggesting that V(Ga)-involved defects are the origin responsible for the YL in UID-GaN. Contrastly, there is much stronger YL in HR-GaN that is nearly free from V(Ga), suggesting that there is another origin for the YL in HR-GaN, which is thought as the carbon-involved defects. Furthermore, it is found that the HR-GaN film with shorter positron diffusion length L(d) exhibits stronger YL. It is suggested that the increased wave function overlap of electrons and holes induced by the extremely strong space localization effect of holes deduced from the short L(d) is the vital factor to enhance the YL efficiency in HR-GaN.
类目[WOS]Physics, Applied
研究领域[WOS]Physics
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语种英语
WOS记录号WOS:000274180600051
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被引频次:33[WOS]   [WOS记录]     [WOS相关记录]
文献类型期刊论文
条目标识符http://ir.ihep.ac.cn/handle/311005/240500
专题中国科学院高能物理研究所_多学科研究中心_期刊论文
作者单位中国科学院高能物理研究所
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Xu, FJ,Shen, B,Lu, L,et al. Different origins of the yellow luminescence in as-grown high-resistance GaN and unintentional-doped GaN films[J]. JOURNAL OF APPLIED PHYSICS,2010,107(2):23528.
APA Xu, FJ.,Shen, B.,Lu, L.,Miao, ZL.,Song, J.,...&王宝义.(2010).Different origins of the yellow luminescence in as-grown high-resistance GaN and unintentional-doped GaN films.JOURNAL OF APPLIED PHYSICS,107(2),23528.
MLA Xu, FJ,et al."Different origins of the yellow luminescence in as-grown high-resistance GaN and unintentional-doped GaN films".JOURNAL OF APPLIED PHYSICS 107.2(2010):23528.
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