Effect of an indium-doped barrier on enhanced near-ultraviolet emission from InGaN/AlGaN: In multiple quantum wells grown on Si(111)
Wu, JJ; Zhang, GY; Liu, XL; Zhu, QS; Wang, ZG; Jia, QJ; Guo, LP; Jia QJ(贾全杰); Guo LP(郭立平)
刊名NANOTECHNOLOGY
2007
卷号18期号:1页码:15402
学科分类Science & Technology - Other Topics; Materials Science; Physics
DOI10.1088/0957-4484/18/1/015402
通讯作者Peking Univ, Res Ctr Wide Gap Semicond, State Key Lab Artificial Microstruct & Mesoscop, Sch Phys, Beijing 100871, Peoples R China ; Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China ; Chinese Acad Sci, Inst High Energy Phys, Beijing 100039, Peoples R China
文章类型Article
英文摘要Low indium content InGaN/AlGaN multiple quantum wells (MQWs) have been grown on Si(111) substrate by metal-organic chemical vapour deposition (MOCVD). A new method of using an isoelectronic indium-doped AlGaN barrier has been found to be very effective in improving the crystalline quality and interfacial abruptness of InGaN quantum well layers. We grew five periods of In0.06Ga0.94N/Al0.20Ga0.80N:In MQWs with In-doped barrier layers and obtained strong near-ultraviolet (UV) emission (similar to 400 nm) at room temperature. An In-doped AlGaN barrier improves the room-temperature PL intensity of InGaN/AlGaN MQWs, making it a candidate barrier for a near-UV source on Si substrate.
类目[WOS]Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary ; Physics, Applied
研究领域[WOS]Science & Technology - Other Topics ; Materials Science ; Physics
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语种英语
WOS记录号WOS:000243836700013
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被引频次:4[WOS]   [WOS记录]     [WOS相关记录]
文献类型期刊论文
条目标识符http://ir.ihep.ac.cn/handle/311005/240469
专题中国科学院高能物理研究所_多学科研究中心_期刊论文
作者单位中国科学院高能物理研究所
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GB/T 7714
Wu, JJ,Zhang, GY,Liu, XL,et al. Effect of an indium-doped barrier on enhanced near-ultraviolet emission from InGaN/AlGaN: In multiple quantum wells grown on Si(111)[J]. NANOTECHNOLOGY,2007,18(1):15402.
APA Wu, JJ.,Zhang, GY.,Liu, XL.,Zhu, QS.,Wang, ZG.,...&郭立平.(2007).Effect of an indium-doped barrier on enhanced near-ultraviolet emission from InGaN/AlGaN: In multiple quantum wells grown on Si(111).NANOTECHNOLOGY,18(1),15402.
MLA Wu, JJ,et al."Effect of an indium-doped barrier on enhanced near-ultraviolet emission from InGaN/AlGaN: In multiple quantum wells grown on Si(111)".NANOTECHNOLOGY 18.1(2007):15402.
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