IHEP OpenIR  > 多学科研究中心
Investigation of cracks in GaN films grown by combined hydride and metal organic vapor-phase epitaxial method
Liu,Jianming1; Liu,Xianlin1; Li,Chengming1; Wei,Hongyuan1; Guo,Yan1; Jiao,Chunmei1; Li,Zhiwei1; Xu,Xiaoqing1; Song,Huaping1; Yang,Shaoyan1; Zhu,Qinsen1; Wang,Zhanguo1; Yang,Anli1; Yang,Tieying2; Wang,Huanhua2
2011-01-12
发表期刊Nanoscale Research Letters
ISSN1556-276X
卷号6期号:1
通讯作者Liu,Jianming(liujianming@semi.ac.cn) ; Liu,Xianlin(xlliu@semi.ac.cn)
摘要AbstractCracks appeared in GaN epitaxial layers which were grown by a novel method combining metal organic vapor-phase epitaxy (MOCVD) and hydride vapor-phase epitaxy (HVPE) in one chamber. The origin of cracks in a 22-μm thick GaN film was fully investigated by high-resolution X-ray diffraction (XRD), micro-Raman spectra, and scanning electron microscopy (SEM). Many cracks under the surface were first observed by SEM after etching for 10 min. By investigating the cross section of the sample with high-resolution micro-Raman spectra, the distribution of the stress along the depth was determined. From the interface of the film/substrate to the top surface of the film, several turnings were found. A large compressive stress existed at the interface. The stress went down as the detecting area was moved up from the interface to the overlayer, and it was maintained at a large value for a long depth area. Then it went down again, and it finally increased near the top surface. The cross-section of the film was observed after cleaving and etching for 2 min. It was found that the crystal quality of the healed part was nearly the same as the uncracked region. This indicated that cracking occurred in the growth, when the tensile stress accumulated and reached the critical value. Moreover, the cracks would heal because of high lateral growth rate.
DOI10.1186/1556-276X-6-69
语种英语
WOS记录号BMC:10.1186/1556-276X-6-69
出版者Springer New York
引用统计
文献类型期刊论文
条目标识符http://ir.ihep.ac.cn/handle/311005/240382
专题多学科研究中心
通讯作者Liu,Jianming; Liu,Xianlin
作者单位1.Chinese Academy of Sciences; Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors
2.Chinese Academy of Sciences; Beijing Synchrotron Radiation Facility, Institute of High Energy Physics
推荐引用方式
GB/T 7714
Liu,Jianming,Liu,Xianlin,Li,Chengming,et al. Investigation of cracks in GaN films grown by combined hydride and metal organic vapor-phase epitaxial method[J]. Nanoscale Research Letters,2011,6(1).
APA Liu,Jianming.,Liu,Xianlin.,Li,Chengming.,Wei,Hongyuan.,Guo,Yan.,...&Wang,Huanhua.(2011).Investigation of cracks in GaN films grown by combined hydride and metal organic vapor-phase epitaxial method.Nanoscale Research Letters,6(1).
MLA Liu,Jianming,et al."Investigation of cracks in GaN films grown by combined hydride and metal organic vapor-phase epitaxial method".Nanoscale Research Letters 6.1(2011).
条目包含的文件
文件名称/大小 文献类型 版本类型 开放类型 使用许可
8203.pdf(4152KB)期刊论文作者接受稿限制开放CC BY-NC-SA请求全文
个性服务
推荐该条目
保存到收藏夹
查看访问统计
导出为Endnote文件
谷歌学术
谷歌学术中相似的文章
[Liu,Jianming]的文章
[Liu,Xianlin]的文章
[Li,Chengming]的文章
百度学术
百度学术中相似的文章
[Liu,Jianming]的文章
[Liu,Xianlin]的文章
[Li,Chengming]的文章
必应学术
必应学术中相似的文章
[Liu,Jianming]的文章
[Liu,Xianlin]的文章
[Li,Chengming]的文章
相关权益政策
暂无数据
收藏/分享
所有评论 (0)
暂无评论
 

除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。