Investigation of cracks in GaN films grown by combined hydride and metal organic vapor-phase epitaxial method
Liu, JM; Liu, XL; Li, CM; Wei, HY; Guo, Y; Jiao, CM; Li, ZW; Xu, XQ; Song, HP; Yang, SY; Zhu, QS; Wang, ZG; Yang, AL; Yang, TY; Wang, HH; Yang TY(杨铁莹); Wang HH(王焕华)
刊名NANOSCALE RESEARCH LETTERS
2011
卷号6页码:69
学科分类Science & Technology - Other Topics; Materials Science; Physics
DOI10.1186/1556-276X-6-69
通讯作者[Liu, Jianming ; Liu, Xianlin ; Li, Chengming ; Wei, Hongyuan ; Guo, Yan ; Jiao, Chunmei ; Li, Zhiwei ; Xu, Xiaoqing ; Song, Huaping ; Yang, Shaoyan ; Zhu, Qinsen ; Wang, Zhanguo ; Yang, Anli] Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China ; [Yang, Tieying ; Wang, Huanhua] Chinese Acad Sci, Beijing Synchrotron Radiat Facil, Inst High Energy Phys, Beijing 100039, Peoples R China
文章类型Article
英文摘要Cracks appeared in GaN epitaxial layers which were grown by a novel method combining metal organic vapor-phase epitaxy (MOCVD) and hydride vapor-phase epitaxy (HVPE) in one chamber. The origin of cracks in a 22-mu m thick GaN film was fully investigated by high-resolution X-ray diffraction (XRD), micro-Raman spectra, and scanning electron microscopy (SEM). Many cracks under the surface were first observed by SEM after etching for 10 min. By investigating the cross section of the sample with high-resolution micro-Raman spectra, the distribution of the stress along the depth was determined. From the interface of the film/substrate to the top surface of the film, several turnings were found. A large compressive stress existed at the interface. The stress went down as the detecting area was moved up from the interface to the overlayer, and it was maintained at a large value for a long depth area. Then it went down again, and it finally increased near the top surface. The cross-section of the film was observed after cleaving and etching for 2 min. It was found that the crystal quality of the healed part was nearly the same as the uncracked region. This indicated that cracking occurred in the growth, when the tensile stress accumulated and reached the critical value. Moreover, the cracks would heal because of high lateral growth rate.
类目[WOS]Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary ; Physics, Applied
研究领域[WOS]Science & Technology - Other Topics ; Materials Science ; Physics
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语种英语
WOS记录号WOS:000290525700002
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被引频次:7[WOS]   [WOS记录]     [WOS相关记录]
文献类型期刊论文
条目标识符http://ir.ihep.ac.cn/handle/311005/240382
专题中国科学院高能物理研究所_多学科研究中心_期刊论文
作者单位中国科学院高能物理研究所
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GB/T 7714
Liu, JM,Liu, XL,Li, CM,et al. Investigation of cracks in GaN films grown by combined hydride and metal organic vapor-phase epitaxial method[J]. NANOSCALE RESEARCH LETTERS,2011,6:69.
APA Liu, JM.,Liu, XL.,Li, CM.,Wei, HY.,Guo, Y.,...&王焕华.(2011).Investigation of cracks in GaN films grown by combined hydride and metal organic vapor-phase epitaxial method.NANOSCALE RESEARCH LETTERS,6,69.
MLA Liu, JM,et al."Investigation of cracks in GaN films grown by combined hydride and metal organic vapor-phase epitaxial method".NANOSCALE RESEARCH LETTERS 6(2011):69.
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