IHEP OpenIR  > 多学科研究中心
Direct preparation and microstructure investigation of p-type transparent conducting Ga-doped SnO2 thin films
Yang TY(杨铁莹); Qin XB(秦秀波); Wang HH(王焕华); Jia QJ(贾全杰); Yu RS(于润升); Wang BY(王宝义); Wang JO(王嘉鸥); Kui RX(奎热西); Jiang XM(姜晓明); Yang, TY; Qin, XB; Wang, HH; Jia, QJ; Yu, RS; Wang, BY; Wang, JO; Ibrahim, K; Jiang, XM
2010
Source PublicationPOWDER DIFFRACTION
Volume25Issue:3Pages:S36-S39
Corresponding Author[Yang, Tieying ; Qin, Xiubo ; Wang, Huan-hua ; Jia, Quanjie ; Yu, Runsheng ; Wang, Baoyi ; Wang, Jiaou ; Ibrahim, Kurash ; Jiang, Xiaoming] Chinese Acad Sci, Inst High Energy Phys, Beijing 100049, Peoples R China
SubtypeArticle; Proceedings Paper
AbstractTransparent p-type conducting Ga-doped SnO2 thin films were prepared using reactive rf-magnetron sputtering. Good p-type conduction was directly realized without the need of postdeposition annealing. The p-type conductivity was found to be very sensitive to the growth condition and process, suggesting that the carrier behavior is strongly related to the fine microstructure of the films. The microstructures of the films were characterized using synchrotron X-ray diffraction and specular reflectivity techniques. The valence state of the Ga dopant was measured from X-ray photoelectron spectra to explain the origin of net holes presented in the films. (C) 2010 International Centre for Diffraction Data. [DOI: 10.1154/1.3478457]
Keywordp-type transparent conducting oxide Ga-doped SnO2 thin film reactive rf-magnetron sputtering microstructure X-ray diffraction X-ray specular reflectivity
Subject AreaMaterials Science
DOI10.1154/1.3478457
URL查看原文
Indexed BySCI ; ADS
Language英语
WOS Research AreaMaterials Science
WOS SubjectMaterials Science, Characterization & Testing
WOS IDWOS:000282386800010
ADS Bibcode2010PDiff..25S..36Y
ADS URLhttps://ui.adsabs.harvard.edu/abs/2010PDiff..25S..36Y
ADS CITATIONShttps://ui.adsabs.harvard.edu/abs/2010PDiff..25S..36Y/citations
Citation statistics
Cited Times:0 [ADS]
Document Type期刊论文
Identifierhttp://ir.ihep.ac.cn/handle/311005/240332
Collection多学科研究中心
Affiliation中国科学院高能物理研究所
First Author AffilicationInstitute of High Energy
Recommended Citation
GB/T 7714
Yang TY,Qin XB,Wang HH,et al. Direct preparation and microstructure investigation of p-type transparent conducting Ga-doped SnO2 thin films[J]. POWDER DIFFRACTION,2010,25(3):S36-S39.
APA 杨铁莹.,秦秀波.,王焕华.,贾全杰.,于润升.,...&Jiang, XM.(2010).Direct preparation and microstructure investigation of p-type transparent conducting Ga-doped SnO2 thin films.POWDER DIFFRACTION,25(3),S36-S39.
MLA 杨铁莹,et al."Direct preparation and microstructure investigation of p-type transparent conducting Ga-doped SnO2 thin films".POWDER DIFFRACTION 25.3(2010):S36-S39.
Files in This Item:
File Name/Size DocType Version Access License
8034.pdf(275KB)期刊论文作者接受稿限制开放CC BY-NC-SAApplication Full Text
Related Services
Recommend this item
Bookmark
Usage statistics
Export to Endnote
Google Scholar
Similar articles in Google Scholar
[杨铁莹]'s Articles
[秦秀波]'s Articles
[王焕华]'s Articles
Baidu academic
Similar articles in Baidu academic
[杨铁莹]'s Articles
[秦秀波]'s Articles
[王焕华]'s Articles
Bing Scholar
Similar articles in Bing Scholar
[杨铁莹]'s Articles
[秦秀波]'s Articles
[王焕华]'s Articles
Terms of Use
No data!
Social Bookmark/Share
All comments (0)
No comment.
 

Items in the repository are protected by copyright, with all rights reserved, unless otherwise indicated.