IHEP OpenIR  > 多学科研究中心
Direct preparation and microstructure investigation of p-type transparent conducting Ga-doped SnO2 thin films
Yang TY(杨铁莹); Qin XB(秦秀波); Wang HH(王焕华); Jia QJ(贾全杰); Yu RS(于润升); Wang BY(王宝义); Wang JO(王嘉鸥); Kui RX(奎热西); Jiang XM(姜晓明); Yang, TY; Qin, XB; Wang, HH; Jia, QJ; Yu, RS; Wang, BY; Wang, JO; Ibrahim, K; Jiang, XM
2010
发表期刊POWDER DIFFRACTION
卷号25期号:3页码:S36-S39
通讯作者[Yang, Tieying ; Qin, Xiubo ; Wang, Huan-hua ; Jia, Quanjie ; Yu, Runsheng ; Wang, Baoyi ; Wang, Jiaou ; Ibrahim, Kurash ; Jiang, Xiaoming] Chinese Acad Sci, Inst High Energy Phys, Beijing 100049, Peoples R China
文章类型Article; Proceedings Paper
摘要Transparent p-type conducting Ga-doped SnO2 thin films were prepared using reactive rf-magnetron sputtering. Good p-type conduction was directly realized without the need of postdeposition annealing. The p-type conductivity was found to be very sensitive to the growth condition and process, suggesting that the carrier behavior is strongly related to the fine microstructure of the films. The microstructures of the films were characterized using synchrotron X-ray diffraction and specular reflectivity techniques. The valence state of the Ga dopant was measured from X-ray photoelectron spectra to explain the origin of net holes presented in the films. (C) 2010 International Centre for Diffraction Data. [DOI: 10.1154/1.3478457]
关键词p-type transparent conducting oxide Ga-doped SnO2 thin film reactive rf-magnetron sputtering microstructure X-ray diffraction X-ray specular reflectivity
学科领域Materials Science
研究领域[WOS]Materials Science ; Materials Science
DOI10.1154/1.3478457
URL查看原文
语种英语
研究领域[WOS]Materials Science ; Materials Science
WOS类目Materials Science, Characterization & Testing
WOS记录号WOS:000282386800010
引用统计
被引频次:1[WOS]   [WOS记录]     [WOS相关记录]
文献类型期刊论文
条目标识符http://ir.ihep.ac.cn/handle/311005/240332
专题多学科研究中心
作者单位中国科学院高能物理研究所
推荐引用方式
GB/T 7714
Yang TY,Qin XB,Wang HH,et al. Direct preparation and microstructure investigation of p-type transparent conducting Ga-doped SnO2 thin films[J]. POWDER DIFFRACTION,2010,25(3):S36-S39.
APA 杨铁莹.,秦秀波.,王焕华.,贾全杰.,于润升.,...&Jiang, XM.(2010).Direct preparation and microstructure investigation of p-type transparent conducting Ga-doped SnO2 thin films.POWDER DIFFRACTION,25(3),S36-S39.
MLA 杨铁莹,et al."Direct preparation and microstructure investigation of p-type transparent conducting Ga-doped SnO2 thin films".POWDER DIFFRACTION 25.3(2010):S36-S39.
条目包含的文件
文件名称/大小 文献类型 版本类型 开放类型 使用许可
8034.pdf(275KB)期刊论文作者接受稿限制开放CC BY-NC-SA请求全文
个性服务
推荐该条目
保存到收藏夹
查看访问统计
导出为Endnote文件
谷歌学术
谷歌学术中相似的文章
[杨铁莹]的文章
[秦秀波]的文章
[王焕华]的文章
百度学术
百度学术中相似的文章
[杨铁莹]的文章
[秦秀波]的文章
[王焕华]的文章
必应学术
必应学术中相似的文章
[杨铁莹]的文章
[秦秀波]的文章
[王焕华]的文章
相关权益政策
暂无数据
收藏/分享
所有评论 (0)
暂无评论
 

除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。