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Switchable semiconductive property of the polyhydroxylated metallofullerene
Tang J(唐军); Xing GM(邢更妹); Zhao YL(赵宇亮); Jing L(荆隆); Yuan H(袁慧); Zhao F(赵峰); Gao XY(高学云); Qian HJ(钱海杰); Su R(苏润); Kui RX(奎热西); Tang, J; Xing, GM; Zhao, YL; Jing, L; Yuan, H; Zhao, F; Gao, XY; Qian, HJ; Su, R; Ibrahim, K; Chu, WG; Zhang, L; Tanigaki, K
Corresponding AuthorChinese Acad Sci, Inst High Energy Phys, Lab Bioenvrionm Effects Nanomat & Nanosafety, Beijing 100049, Peoples R China ; Chinese Acad Sci, Inst High Energy Phys, Beijing Synchrotron Radiat Facil, Beijing 100049, Peoples R China ; Tsinghua Foxconn Nanotechnol Res Ctr, Beijing 100084, Peoples R China ; Natl Ctr Nanosci & Technol China, Beijing 100080, Peoples R China ; Tohoku Univ, Grad Sch Sci, Dept Phys, Aoba Ku, Sendai, Miyagi 9808578, Japan
AbstractThe temperature-sensitive property of polyhydroxylated metallofullerene film of Gd@C-82(OH)(x) with special hydroxyl number was studied using synchrotron radiation ultraviolet photoelectron spectroscopy (UPS) and TEM techniques. From room temperature (RT) to 4 degrees C the photoelectron onset energy of the spectra of Gd@C-82(OH)(12) shifted from 1.9 to 0.2 eV, indicating that Gd@CS82(OH)(12) automatically shifted from insulator at RT to semiconductor at 4 degrees C. However, this could not be observed for Gd@C-82(OH)(20). TEM experiments show that the variation of conductivity can be ascribed to formation of a microcrystal under low temperature. The dipole moment induced unique intermolecular interactions and self-assembled microcrystalline structures for Gd@C-82(OH)(12). This may cause reconstruction of the upper valence band formed by pi-like electrons as well as the density of states (DOS) around the Fermi level (E-F) and reconstruct the deeper valence band formed by sigma-like electrons, eventually resulting in a shift to a semiconducting nature. These findings revealed a novel nature for polyhydroxylated Gd@C-82(OH)(x) materials: Their insulating properties can be controllably tuned into semiconducting ones as a function of temperature.
Subject AreaChemistry
WOS Research AreaChemistry
WOS SubjectChemistry, Physical
WOS IDWOS:000250142400013
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Document Type期刊论文
First Author AffilicationInstitute of High Energy
Recommended Citation
GB/T 7714
Tang J,Xing GM,Zhao YL,et al. Switchable semiconductive property of the polyhydroxylated metallofullerene[J]. JOURNAL OF PHYSICAL CHEMISTRY B,2007,111(41):11929-11934.
APA 唐军.,邢更妹.,赵宇亮.,荆隆.,袁慧.,...&Tanigaki, K.(2007).Switchable semiconductive property of the polyhydroxylated metallofullerene.JOURNAL OF PHYSICAL CHEMISTRY B,111(41),11929-11934.
MLA 唐军,et al."Switchable semiconductive property of the polyhydroxylated metallofullerene".JOURNAL OF PHYSICAL CHEMISTRY B 111.41(2007):11929-11934.
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