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Electronic Structures and Magnetic Properties of GaN Sheets and Nanoribbons
Li HM(李海铭); Li J(李炯); Zhang S(张硕); Zhou J(周靖); Zhang LJ(张林娟); Chu WS(储旺盛); Chen DL(陈栋梁); Zhao HF(赵海峰); Wu ZY(吴自玉); Li, HM; Dai, J; Li, J; Zhang, S; Zhou, J; Zhang, LJ; Chu, WS; Chen, DL; Zhao, HR; Yang, JL; Wu, ZY
2010
发表期刊JOURNAL OF PHYSICAL CHEMISTRY C
卷号114期号:26页码:11390-11394
通讯作者[Dai, Jun ; Yang, Jinlong] Univ Sci & Technol China, Hefei Natl Lab Phys Sci Microscale, Hefei 230026, Anhui, Peoples R China ; [Li, Haiming ; Li, Jiong ; Zhang, Shuo ; Zhou, Jing ; Zhang, Linjuan ; Chu, Wangsheng ; Chen, Dongliang ; Zhao, Haireng ; Wu, Ziyu] Chinese Acad Sci, Inst High Energy Phys, Beijing Synchrotron Radiat Facil, Beijing 100049, Peoples R China ; [Li, Jiong ; Zhang, Shuo] Chinese Acad Sci, Shanghai Synchrotron Radiat Facil, Shanghai Inst Appl Phys, Shanghai 201204, Peoples R China ; [Wu, Ziyu] Univ Sci & Technol China, Natl Synchrotron Radiat Lab, Hefei 230026, Anhui, Peoples R China ; [Wu, Ziyu] Chinese Acad Sci, Theoret Phys Ctr Sci Facil, Beijing 100049, Peoples R China
摘要First principles calculations were performed to study the electronic structures of gallium nitride (GaN) sheets and nanoribbons (NRs) in order to understand the influence of defects or edge states on magnetic properties. It is shown that the Ga-defective GaN sheet may be a good candidate for spintronics due to its half-metal property under certain conditions, even if a perfect GaN sheet is a nonmagnetic semiconductor. We investigated both zigzag and armchair GaN NRs with and without edge atoms passivated by H. The H-passivated GaN NRs and bare armchair NRs can be classified as nonmagnetic semiconductors. Band gap gradually decreases with the increase of the width of NRs. A ferromagnetic character occurs in bare zigzag GaN NRs with width of about 1.7 nm (mainly determined by edge Ga and N). Furthermore, we have shown that thin layer GaN NRs could also be ferromagnetic. Magnetic moment does not decrease to zero even up to six layers. Results offer a deeper understanding of the influence of both defects and edge states of GaN sheets and monolayer and multilayer NRs, particularly in terms of their structural and magnetic properties.
文章类型Article
学科领域Chemistry; Science & Technology - Other Topics; Materials Science
DOI10.1021/jp1024558
研究领域[WOS]Chemistry ; Science & Technology - Other Topics ; Materials Science
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语种英语
WOS类目Chemistry, Physical ; Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary
WOS记录号WOS:000279282200008
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被引频次:66[WOS]   [WOS记录]     [WOS相关记录]
文献类型期刊论文
条目标识符http://ir.ihep.ac.cn/handle/311005/240181
专题多学科研究中心
加速器中心
粒子天体物理中心
作者单位中国科学院高能物理研究所
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Li HM,Li J,Zhang S,et al. Electronic Structures and Magnetic Properties of GaN Sheets and Nanoribbons[J]. JOURNAL OF PHYSICAL CHEMISTRY C,2010,114(26):11390-11394.
APA 李海铭.,李炯.,张硕.,周靖.,张林娟.,...&Wu, ZY.(2010).Electronic Structures and Magnetic Properties of GaN Sheets and Nanoribbons.JOURNAL OF PHYSICAL CHEMISTRY C,114(26),11390-11394.
MLA 李海铭,et al."Electronic Structures and Magnetic Properties of GaN Sheets and Nanoribbons".JOURNAL OF PHYSICAL CHEMISTRY C 114.26(2010):11390-11394.
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