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X-ray diffraction study of GaAs/InAs/GaAs ultrathin single quantum well
Bai, J; Liu, WH; Wu, ZQ; Wang, YT; Xiu, LS; Jiang, XM; Xiu LS(修立松); Jiang XM(姜晓明)
1996
发表期刊JOURNAL OF APPLIED PHYSICS
卷号79期号:10页码:7627-7631
通讯作者ACAD SINICA,INST SEMICOND,BEIJING 100083,PEOPLES R CHINA ; ACAD SINICA,INST HIGH ENERGY PHYS,BEIJING 100039,PEOPLES R CHINA
文章类型Article
摘要Ultrathin single quantum well (about one monolayer) grown on GaAs(001) substrate with GaAs cap layer has been studied by high resolution x-ray diffractometer on a beamline of the Beijing Synchrotron Radiation Facility. The interference fringes on both sides of the GaAs(004) Bragg peak are asymmetric and a range of weak fringes in the higher angle side of the Bragg peak is observed. The simulated results by using the kinematical diffraction method shows that the weak fringe range appears in the higher angle side when the phase shift introduced by the single quantum well is very slightly smaller than m pi (m:integer), and vice versa. After introducing a reasonable model of single quantum well, the simulated pattern is in good agreement with the experiment. (C) 1996 American Institute of Physics.
学科领域Physics
研究领域[WOS]Physics ; Physics
DOI10.1063/1.361526
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语种英语
研究领域[WOS]Physics ; Physics
WOS类目Physics, Applied
WOS记录号WOS:A1996UK22600023
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文献类型期刊论文
条目标识符http://ir.ihep.ac.cn/handle/311005/240127
专题多学科研究中心
作者单位中国科学院高能物理研究所
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Bai, J,Liu, WH,Wu, ZQ,et al. X-ray diffraction study of GaAs/InAs/GaAs ultrathin single quantum well[J]. JOURNAL OF APPLIED PHYSICS,1996,79(10):7627-7631.
APA Bai, J.,Liu, WH.,Wu, ZQ.,Wang, YT.,Xiu, LS.,...&姜晓明.(1996).X-ray diffraction study of GaAs/InAs/GaAs ultrathin single quantum well.JOURNAL OF APPLIED PHYSICS,79(10),7627-7631.
MLA Bai, J,et al."X-ray diffraction study of GaAs/InAs/GaAs ultrathin single quantum well".JOURNAL OF APPLIED PHYSICS 79.10(1996):7627-7631.
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