Annealing ambient on the evolution of He-induced voids in silicon
Li, BS; Zhang, CH; Zhong YR(钟玉荣); Wang DN(王丹妮); Zhong, YR; Wang, DN; Zhou, LH; Yang, YT; Zhang, LQ; Zhang, HH; Zhang, Y; Han, LH
刊名APPLIED SURFACE SCIENCE
2011
卷号257期号:16页码:7036-7040
关键词Silicon Positron annihilation Void Annealing ambient TEM
学科分类Chemistry; Materials Science; Physics
DOI10.1016/j.apsusc.2011.02.125
通讯作者[Li, B. S. ; Zhang, C. H. ; Yang, Y. T. ; Zhang, L. Q.] Chinese Acad Sci, Inst Modern Phys, Lanzhou 730000, Peoples R China ; [Li, B. S. ; Zhou, L. H. ; Yang, Y. T. ; Zhang, H. H. ; Zhang, Y. ; Han, L. H.] Chinese Acad Sci, Grad Sch, Beijing 100049, Peoples R China ; [Zhong, Y. R. ; Wang, D. N.] Chinese Acad Sci, Inst High Energy Phys, Beijing 100039, Peoples R China
文章类型Article
英文摘要The effects of annealing ambient on the He-induced voids in silicon were investigated using the combination of the Doppler broadening spectroscopy using a variable-energy positron beam and cross-section transmission electron microscopy (XTEM). A < 1 0 0 >-oriented silicon wafer was implanted with He ions at an energy of 15 keV to a dose of 2 x 10(16) cm(-2) at room temperature. Post-implantation, the samples were annealed at a temperature of 1000 degrees C in the ambient of vacuum, argon, nitrogen, air and oxygen. Positron annihilation spectroscopy (PAS) spectra varied with the annealing ambient. XTEM micrographs demonstrated that the density of He-induced voids could be influenced by the annealing ambient. (C) 2011 Elsevier B.V. All rights reserved.
类目[WOS]Chemistry, Physical ; Materials Science, Coatings & Films ; Physics, Applied ; Physics, Condensed Matter
研究领域[WOS]Chemistry ; Materials Science ; Physics
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语种英语
WOS记录号WOS:000290015600003
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被引频次:3[WOS]   [WOS记录]     [WOS相关记录]
文献类型期刊论文
条目标识符http://ir.ihep.ac.cn/handle/311005/240102
专题中国科学院高能物理研究所_多学科研究中心_期刊论文
作者单位中国科学院高能物理研究所
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Li, BS,Zhang, CH,Zhong YR,et al. Annealing ambient on the evolution of He-induced voids in silicon[J]. APPLIED SURFACE SCIENCE,2011,257(16):7036-7040.
APA Li, BS.,Zhang, CH.,钟玉荣.,王丹妮.,Zhong, YR.,...&Han, LH.(2011).Annealing ambient on the evolution of He-induced voids in silicon.APPLIED SURFACE SCIENCE,257(16),7036-7040.
MLA Li, BS,et al."Annealing ambient on the evolution of He-induced voids in silicon".APPLIED SURFACE SCIENCE 257.16(2011):7036-7040.
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