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Slow positron beam study of nitrogen implanted CZ-Si subjected to rapid thermal processing
Hao XP(郝小鹏); Yu RS(于润升); Wang BY(王宝义); Wang DN(王丹妮); Ma CX(马创新); Wei L(魏龙); Hao, XP; Yu, RS; Wang, BY; Chen, HL; Wang, DN; Ma, CX; Wei, L
2007
发表期刊APPLIED SURFACE SCIENCE
卷号253期号:16页码:6868-6871
通讯作者Chinese Acad Sci, Inst High Energy Phys, Key Lab Nucl Anal Tech, Beijing 100049, Peoples R China ; Chinese Acad Sci, Grad Sch, Beijing 100039, Peoples R China ; Zhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China
摘要In this experiment, nitrogen ions were implanted into CZ-silicon wafer at 100 keV at room temperature with the fluence of 5 x 10(15) N-2(+)/cm(2), followed by rapid thermal processing (RTP) at different temperatures. The single detector Doppler broadening and coincidence Doppler broadening measurements on slow positron beam were carried out to characterize the defects in the as-implanted silicon and RTP-treated samples. It is found that both nitrogen-vacancy complexes (N-Vsi) and oxygen-vacancy complexes (O-Vsi) produced by nitrogen implantation diffuse back to the sample surface upon annealing. But the N-Vsi and the O-Vsi complete with each other and give a summed effect on positron annihilation characteristics. It is shown that the N-Vsi win out the O-Vsi in as-implanted sample and by RTP at 650 degrees C, 750 degrees C, which make the S-parameter increase; O-Vsi plays a dominant role after annealing above 850 degrees C, which makes the S parameter decrease. ((C) 2007 Elsevier B.V. All rights reserved.
文章类型Article; Proceedings Paper
关键词slow positron beam nitrogen ion implantation rapid thermal processing
学科领域Chemistry; Materials Science; Physics
研究领域[WOS]Chemistry ; Materials Science ; Physics
DOI10.1016/j.apsusc.2007.01.125
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语种英语
WOS类目Chemistry, Physical ; Materials Science, Coatings & Films ; Physics, Applied ; Physics, Condensed Matter
WOS记录号WOS:000247156100032
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文献类型期刊论文
条目标识符http://ir.ihep.ac.cn/handle/311005/240097
专题多学科研究中心
核技术应用研究中心
作者单位中国科学院高能物理研究所
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Hao XP,Yu RS,Wang BY,et al. Slow positron beam study of nitrogen implanted CZ-Si subjected to rapid thermal processing[J]. APPLIED SURFACE SCIENCE,2007,253(16):6868-6871.
APA 郝小鹏.,于润升.,王宝义.,王丹妮.,马创新.,...&Wei, L.(2007).Slow positron beam study of nitrogen implanted CZ-Si subjected to rapid thermal processing.APPLIED SURFACE SCIENCE,253(16),6868-6871.
MLA 郝小鹏,et al."Slow positron beam study of nitrogen implanted CZ-Si subjected to rapid thermal processing".APPLIED SURFACE SCIENCE 253.16(2007):6868-6871.
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