Chinese Acad Sci, Inst High Energy Phys, Key Lab Nucl Anal Tech, Beijing 100049, Peoples R China
; Grad Univ Chinese Acad Sci, Beijing 100049, Peoples R China
The effect of Zr-ion implantation into zircaloy-4 and the defect recovery was investigated by slow positron beam. Specimens were implanted by zirconium ions with doses ranging from 1 X 10(15) to 1 X 10(17) ions/cm(2) using a MEVVA source at an extract voltage of 50 kV. It was found that defects in the samples irradiated with a dose above I X 10(16) ions/Cm-2 has been recovered during the implantation process, and the thickness of oxide layer increases as indicated by auger electron spectroscopy (AES) measurements. Meanwhile, the defects in the sample implanted with a dose of 1 X 10(15) ions/Cm-2 turns out to be recovered after annealing at 300 degrees C in high vacuum for 1 hour, showing the corresponding the recovery energy of defects is very low. We propose the method of keeping the material at an appropriate temperature during implantation to improve the corrosion resistance of Zr-4 alloy, according to the relationship between the defect concentration and the corrosion resistance.