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Spectroscopic ellipsometry and positron annihilation investigation of sputtered HfO2 films
Ma, ZW; Liu, LX; Xie, YZ; Su, YR; Zhao, HT; Wang, BY; Cao, XZ; Qin, XB; Li, J; Yang, YH; Xie, EQ; Wang BY(王宝义); Cao XZ(曹兴忠); Qin XB(秦秀波)
2011
发表期刊THIN SOLID FILMS
卷号519期号:19页码:6349-6353
通讯作者[Ma, Z. W. ; Liu, L. X. ; Xie, Y. Z. ; Su, Y. R. ; Zhao, H. T. ; Li, J. ; Yang, Y. H. ; Xie, E. Q.] Lanzhou Univ, Sch Phys Sci & Technol, Lanzhou 730000, Peoples R China ; [Ma, Z. W.] Yuncheng Univ, Dept Phys & Elect Engn, Yuncheng 044000, Peoples R China ; [Wang, B. Y. ; Cao, X. Z. ; Qin, X. B.] Chinese Acad Sci, Inst High Energy Phys, Key Lab Nucl Anal Tech, Beijing 100049, Peoples R China
摘要Hafnium oxide (HfO2) films were prepared using a pulsed sputtering method and different O-2/(O-2 + Ar) ratios, deposition pressures, and sputtering powers. Spectroscopic ellipsometry (SE) and positron annihilation spectroscopy (PAS) were used to investigate the influence of the deposition parameters on the number of open volume defects (OVDs) in the HfO2 films. The results reveal that a low O-2/(O-2 + Ar) ratio is critical for obtaining films with a dense structure and low OVDs. The film density increased and OVDs decreased when the deposition pressure was increased. The film deposited at high sputtering power showed a denser structure and lower OVDs. Our results suggest that SE and PAS are effective techniques for studying the optical properties of and defects in HfO2 and provide an insight into the fabrication of high-quality HfO2 thin films for optical applications. (C) 2011 Elsevier B.V. All rights reserved.
文章类型Article
关键词Hafnium dioxide Spectroscopic ellipsometry Positron annihilation spectroscopy Open volume defects Sputtering
学科领域Materials Science; Physics
DOI10.1016/j.tsf.2011.04.033
研究领域[WOS]Materials Science ; Physics
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语种英语
WOS类目Materials Science, Multidisciplinary ; Materials Science, Coatings & Films ; Physics, Applied ; Physics, Condensed Matter
WOS记录号WOS:000292720000028
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被引频次:5[WOS]   [WOS记录]     [WOS相关记录]
文献类型期刊论文
条目标识符http://ir.ihep.ac.cn/handle/311005/240072
专题多学科研究中心
作者单位中国科学院高能物理研究所
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Ma, ZW,Liu, LX,Xie, YZ,et al. Spectroscopic ellipsometry and positron annihilation investigation of sputtered HfO2 films[J]. THIN SOLID FILMS,2011,519(19):6349-6353.
APA Ma, ZW.,Liu, LX.,Xie, YZ.,Su, YR.,Zhao, HT.,...&秦秀波.(2011).Spectroscopic ellipsometry and positron annihilation investigation of sputtered HfO2 films.THIN SOLID FILMS,519(19),6349-6353.
MLA Ma, ZW,et al."Spectroscopic ellipsometry and positron annihilation investigation of sputtered HfO2 films".THIN SOLID FILMS 519.19(2011):6349-6353.
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