IHEP OpenIR  > 多学科研究中心
Preparation and application in p-n homojunction diode of p-type transparent conducting Ga-doped SnO2 thin films
Yang TY(杨铁莹); Qin XB(秦秀波); Wang HH(王焕华); Jia QJ(贾全杰); Yu RS(于润升); Wang BY(王宝义); Wang JO(王嘉鸥); Kui RX(奎热西); Jiang XM(姜晓明); Yang, TY; Qin, XB; Wang, HH; Jia, QJ; Yu, RS; Wang, BY; Wang, JO; Ibrahim, K; Jiang, XM; He, Q
2010
Source PublicationTHIN SOLID FILMS
Volume518Issue:19Pages:5542-5545
Corresponding Author[Yang, Tieying ; Qin, Xiubo ; Wang, Huan-hua ; Jia, Quanjie ; Yu, Runsheng ; Wang, Baoyi ; Wang, Jiaou ; Ibrahim, Kurash ; Jiang, Xiaoming] Chinese Acad Sci, Inst High Energy Phys, Beijing 100049, Peoples R China ; [He, Qing] Chinese Acad Sci, Shanghai Inst Appl Phys, Shanghai 201204, Peoples R China
SubtypeArticle
AbstractThe direct preparation of p-type transparent conducting Ga-doped SnO2 thin films and their fundamental application in transparent p-n homojunction diode were realized. The films were grown in an active oxygen ambient using reactive rf magnetron sputtering without post-deposition annealing involved. This method improved the electrical properties of the films while maintaining their optical transparency. By growing a p-type thin film on commercial n-type SnO2:F-coated glass, transparent p-n homojunction diode was obtained. It exhibits a distinct current-voltage rectifying characteristic, manifesting this p-type thin film and the fabrication technology are suitable for industrial applications. (C) 2010 Elsevier B.V. All rights reserved.
Keywordp-Type transparent conducting oxide Ga-doped SnO2 Thin films p-n homojunction diode Magnetron sputtering X-ray diffraction X-ray photoelectron spectroscopy
Subject AreaMaterials Science; Physics
DOI10.1016/j.tsf.2010.04.063
URL查看原文
Indexed BySCI ; ADS
Language英语
WOS Research AreaMaterials Science ; Physics
WOS SubjectMaterials Science, Multidisciplinary ; Materials Science, Coatings & Films ; Physics, Applied ; Physics, Condensed Matter
WOS IDWOS:000279885700035
ADS Bibcode2010TSF...518.5542Y
ADS URLhttps://ui.adsabs.harvard.edu/abs/2010TSF...518.5542Y
ADS CITATIONShttps://ui.adsabs.harvard.edu/abs/2010TSF...518.5542Y/citations
Citation statistics
Cited Times:22 [ADS]
Document Type期刊论文
Identifierhttp://ir.ihep.ac.cn/handle/311005/240037
Collection多学科研究中心
Affiliation中国科学院高能物理研究所
First Author AffilicationInstitute of High Energy
Recommended Citation
GB/T 7714
Yang TY,Qin XB,Wang HH,et al. Preparation and application in p-n homojunction diode of p-type transparent conducting Ga-doped SnO2 thin films[J]. THIN SOLID FILMS,2010,518(19):5542-5545.
APA 杨铁莹.,秦秀波.,王焕华.,贾全杰.,于润升.,...&He, Q.(2010).Preparation and application in p-n homojunction diode of p-type transparent conducting Ga-doped SnO2 thin films.THIN SOLID FILMS,518(19),5542-5545.
MLA 杨铁莹,et al."Preparation and application in p-n homojunction diode of p-type transparent conducting Ga-doped SnO2 thin films".THIN SOLID FILMS 518.19(2010):5542-5545.
Files in This Item:
File Name/Size DocType Version Access License
7531.pdf(572KB)期刊论文作者接受稿限制开放CC BY-NC-SAApplication Full Text
Related Services
Recommend this item
Bookmark
Usage statistics
Export to Endnote
Google Scholar
Similar articles in Google Scholar
[杨铁莹]'s Articles
[秦秀波]'s Articles
[王焕华]'s Articles
Baidu academic
Similar articles in Baidu academic
[杨铁莹]'s Articles
[秦秀波]'s Articles
[王焕华]'s Articles
Bing Scholar
Similar articles in Bing Scholar
[杨铁莹]'s Articles
[秦秀波]'s Articles
[王焕华]'s Articles
Terms of Use
No data!
Social Bookmark/Share
All comments (0)
No comment.
 

Items in the repository are protected by copyright, with all rights reserved, unless otherwise indicated.