Preparation and application in p-n homojunction diode of p-type transparent conducting Ga-doped SnO2 thin films
Yang TY(杨铁莹); Qin XB(秦秀波); Wang HH(王焕华); Jia QJ(贾全杰); Yu RS(于润升); Wang BY(王宝义); Wang JO(王嘉鸥); Kui RX(奎热西); Jiang XM(姜晓明); Yang, TY; Qin, XB; Wang, HH; Jia, QJ; Yu, RS; Wang, BY; Wang, JO; Ibrahim, K; Jiang, XM; He, Q
刊名THIN SOLID FILMS
2010
卷号518期号:19页码:5542-5545
关键词p-Type transparent conducting oxide Ga-doped SnO2 Thin films p-n homojunction diode Magnetron sputtering X-ray diffraction X-ray photoelectron spectroscopy
学科分类Materials Science; Physics
DOI10.1016/j.tsf.2010.04.063
通讯作者[Yang, Tieying ; Qin, Xiubo ; Wang, Huan-hua ; Jia, Quanjie ; Yu, Runsheng ; Wang, Baoyi ; Wang, Jiaou ; Ibrahim, Kurash ; Jiang, Xiaoming] Chinese Acad Sci, Inst High Energy Phys, Beijing 100049, Peoples R China ; [He, Qing] Chinese Acad Sci, Shanghai Inst Appl Phys, Shanghai 201204, Peoples R China
文章类型Article
英文摘要The direct preparation of p-type transparent conducting Ga-doped SnO2 thin films and their fundamental application in transparent p-n homojunction diode were realized. The films were grown in an active oxygen ambient using reactive rf magnetron sputtering without post-deposition annealing involved. This method improved the electrical properties of the films while maintaining their optical transparency. By growing a p-type thin film on commercial n-type SnO2:F-coated glass, transparent p-n homojunction diode was obtained. It exhibits a distinct current-voltage rectifying characteristic, manifesting this p-type thin film and the fabrication technology are suitable for industrial applications. (C) 2010 Elsevier B.V. All rights reserved.
类目[WOS]Materials Science, Multidisciplinary ; Materials Science, Coatings & Films ; Physics, Applied ; Physics, Condensed Matter
研究领域[WOS]Materials Science ; Physics
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语种英语
WOS记录号WOS:000279885700035
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文献类型期刊论文
条目标识符http://ir.ihep.ac.cn/handle/311005/240037
专题中国科学院高能物理研究所_多学科研究中心_期刊论文
中国科学院高能物理研究所_多学科研究中心
作者单位中国科学院高能物理研究所
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Yang TY,Qin XB,Wang HH,et al. Preparation and application in p-n homojunction diode of p-type transparent conducting Ga-doped SnO2 thin films[J]. THIN SOLID FILMS,2010,518(19):5542-5545.
APA 杨铁莹.,秦秀波.,王焕华.,贾全杰.,于润升.,...&He, Q.(2010).Preparation and application in p-n homojunction diode of p-type transparent conducting Ga-doped SnO2 thin films.THIN SOLID FILMS,518(19),5542-5545.
MLA 杨铁莹,et al."Preparation and application in p-n homojunction diode of p-type transparent conducting Ga-doped SnO2 thin films".THIN SOLID FILMS 518.19(2010):5542-5545.
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