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Broadband yellow luminescence in the photoluminescence spectra of n-GaN implanted by the different ions
Zhang, XD; Lin, DX; Li, GP; You, W; Zhang, LM; Zhang, Y; Liu, ZM; Lin DX(林德旭)
2006
发表期刊ACTA PHYSICA SINICA
卷号55期号:10页码:5487-5493
通讯作者Lanzhou Univ, Dept Modern Phys, Lanzhou 730000, Peoples R China ; Chinese Acad Sci, Inst High Energy Phys, Beijing 100080, Peoples R China
摘要The n-type gallium nitride (GaN) films were implanted with oxygen, nitrogen, magnesium, silicon and gallium ions at room temperature in the dose range from 10(13) to 10(16) cm(-2). All implanted samples were annealed at 900 degrees C for 10 min in a flowing nitrogen environment. The effects of the implantation ions on the broad yellow luminescence (YL) band were systematically investigated using the photoluminescence (PL) spectra taken at room temperature. A formula based on a semi-empirical model which was proposed by us was deduced, and with it, the experimental data was analyzed and the influence of implanted ions on the intensity of YL band was determined. We can confirm that the effects of the Mg (10(16)/cm(2)) and Si (<= 10(14)/cm(2)) and Ga (>= 10(15)/cm(2)) implanted ions on the YL band are larger than that of the N and O implanted ions.
文章类型Article
关键词gallium nitride photoluminescence spectra ion implantation
学科领域Physics
研究领域[WOS]Physics
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语种英语
WOS类目Physics, Multidisciplinary
WOS记录号WOS:000241215200084
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被引频次:2[WOS]   [WOS记录]     [WOS相关记录]
文献类型期刊论文
条目标识符http://ir.ihep.ac.cn/handle/311005/240033
专题实验物理中心
作者单位中国科学院高能物理研究所
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GB/T 7714
Zhang, XD,Lin, DX,Li, GP,et al. Broadband yellow luminescence in the photoluminescence spectra of n-GaN implanted by the different ions[J]. ACTA PHYSICA SINICA,2006,55(10):5487-5493.
APA Zhang, XD.,Lin, DX.,Li, GP.,You, W.,Zhang, LM.,...&林德旭.(2006).Broadband yellow luminescence in the photoluminescence spectra of n-GaN implanted by the different ions.ACTA PHYSICA SINICA,55(10),5487-5493.
MLA Zhang, XD,et al."Broadband yellow luminescence in the photoluminescence spectra of n-GaN implanted by the different ions".ACTA PHYSICA SINICA 55.10(2006):5487-5493.
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