Lanzhou Univ, Dept Modern Phys, Lanzhou 730000, Peoples R China
; Chinese Acad Sci, Inst High Energy Phys, Beijing 100080, Peoples R China
The n-type gallium nitride (GaN) films were implanted with oxygen, nitrogen, magnesium, silicon and gallium ions at room temperature in the dose range from 10(13) to 10(16) cm(-2). All implanted samples were annealed at 900 degrees C for 10 min in a flowing nitrogen environment. The effects of the implantation ions on the broad yellow luminescence (YL) band were systematically investigated using the photoluminescence (PL) spectra taken at room temperature. A formula based on a semi-empirical model which was proposed by us was deduced, and with it, the experimental data was analyzed and the influence of implanted ions on the intensity of YL band was determined. We can confirm that the effects of the Mg (10(16)/cm(2)) and Si (<= 10(14)/cm(2)) and Ga (>= 10(15)/cm(2)) implanted ions on the YL band are larger than that of the N and O implanted ions.
Zhang, XD,Lin, DX,Li, GP,et al. Broadband yellow luminescence in the photoluminescence spectra of n-GaN implanted by the different ions[J]. ACTA PHYSICA SINICA,2006,55(10):5487-5493.
Zhang, XD.,Lin, DX.,Li, GP.,You, W.,Zhang, LM.,...&林德旭.(2006).Broadband yellow luminescence in the photoluminescence spectra of n-GaN implanted by the different ions.ACTA PHYSICA SINICA,55(10),5487-5493.
Zhang, XD,et al."Broadband yellow luminescence in the photoluminescence spectra of n-GaN implanted by the different ions".ACTA PHYSICA SINICA 55.10(2006):5487-5493.