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AU/GAAS INTERFACE ANNEALING STUDY BY POSITRON-LIFETIME SPECTROSCOPY
SHAN, YY; PANDA, BK; FUNG, S; BELING, CD; WANG, YY; Wang YY(王蕴玉)
1995
发表期刊PHYSICAL REVIEW B
卷号52期号:7页码:4724-4727
通讯作者INST HIGH ENERGY PHYS, BEIJING, PEOPLES R CHINA
摘要Structural changes of annealed Au contacts on semi-insulating GaAs have been observed by conventional positron lifetime-spectroscopy in which a significant fraction of positrons are drifted from a Na-22 source to the contact by an electric field. For annealing temperatures below 200 degrees C it is found that the interface traps positrons into microvoids with a characteristic positron lifetime of 380+/-10 ps. For annealing in the range of 300 degrees C-400 degrees C a 150+/-20 ps additional component appears in the lifetime spectra that is attributed to positrons annihilating from AuGa phases at the interface. The most likely explanation for this sudden onset of the positron component in the AuGa phases is that the changes in the Gabs near surface electron chemical potential, brought about by annealing, affect the interfacial dipole in such a way as to allow a favorable potential barrier for positron penetration into the metallic phase.
文章类型Note
学科领域Physics
研究领域[WOS]Physics
DOI10.1103/PhysRevB.52.4724
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语种英语
WOS类目Physics, Condensed Matter
WOS记录号WOS:A1995RR50200025
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被引频次:3[WOS]   [WOS记录]     [WOS相关记录]
文献类型期刊论文
条目标识符http://ir.ihep.ac.cn/handle/311005/239994
专题多学科研究中心
作者单位中国科学院高能物理研究所
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SHAN, YY,PANDA, BK,FUNG, S,et al. AU/GAAS INTERFACE ANNEALING STUDY BY POSITRON-LIFETIME SPECTROSCOPY[J]. PHYSICAL REVIEW B,1995,52(7):4724-4727.
APA SHAN, YY,PANDA, BK,FUNG, S,BELING, CD,WANG, YY,&王蕴玉.(1995).AU/GAAS INTERFACE ANNEALING STUDY BY POSITRON-LIFETIME SPECTROSCOPY.PHYSICAL REVIEW B,52(7),4724-4727.
MLA SHAN, YY,et al."AU/GAAS INTERFACE ANNEALING STUDY BY POSITRON-LIFETIME SPECTROSCOPY".PHYSICAL REVIEW B 52.7(1995):4724-4727.
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