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Study of He-induced nano-cavities as sinks of oxygen for forming silicon-on-insulator
Li, BS; Zhang, CH; Hao, XP; Wang, DN; Zhou, LH; Zhang, HH; Yang, YT; Zhang, LQ
2008
发表期刊CHINESE PHYSICS B
卷号17期号:10页码:3836-3840
通讯作者[Li Bing-Sheng ; Zhang Chong-Hong ; Zhou Li-Hong ; Zhang Hong-Hua ; Yang Yi-Tao ; Zhang Li-Qing] Chinese Acad Sci, Inst Modern Phys, Lanzhou 730000, Peoples R China ; [Hao Xiao-Peng ; Wang Dan-Ni] Chinese Acad Sci, Inst High Energy Phys, Beijing 100039, Peoples R China
摘要In the present work, a Cz-Silicon wafer is implanted with helium ions to produce a buried porous layer, and then thermally annealed in a dry oxygen atmosphere to make oxygen transport into the cavities. The formation of the buried oxide layer in the case of internal oxidation (ITOX) of the buried porous layer of cavities in the silicon sample is studied by positron beam annihilation (PBA). The cavities are formed by 15 keV He implantation at a fluence of 2 x 10(16) cm(-2) and followed by thermal annealing at 673 K for 30 min in vacuum. The internal oxidation is carried out at temperatures ranging from 1073 to 1473 K for 2 h in a dry oxygen atmosphere. The layered structures evolved in the silicon are detected by using the PBA and the thicknesses of their layers and nature are also investigated. It is found that rather high temperatures must be chosen to establish a sufficient flux of oxygen into the cavity layer. On the other hand high temperatures lead to coarsening the cavities and removing the cavity layer finally.
文章类型Article
关键词positron annihilation nanocavity oxygen diffusion silicon dioxide
学科领域Physics
研究领域[WOS]Physics
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语种英语
WOS类目Physics, Multidisciplinary
WOS记录号WOS:000260263800049
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被引频次:2[WOS]   [WOS记录]     [WOS相关记录]
文献类型期刊论文
条目标识符http://ir.ihep.ac.cn/handle/311005/239943
专题多学科研究中心
作者单位中国科学院高能物理研究所
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GB/T 7714
Li, BS,Zhang, CH,Hao, XP,et al. Study of He-induced nano-cavities as sinks of oxygen for forming silicon-on-insulator[J]. CHINESE PHYSICS B,2008,17(10):3836-3840.
APA Li, BS.,Zhang, CH.,Hao, XP.,Wang, DN.,Zhou, LH.,...&Zhang, LQ.(2008).Study of He-induced nano-cavities as sinks of oxygen for forming silicon-on-insulator.CHINESE PHYSICS B,17(10),3836-3840.
MLA Li, BS,et al."Study of He-induced nano-cavities as sinks of oxygen for forming silicon-on-insulator".CHINESE PHYSICS B 17.10(2008):3836-3840.
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