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Anomalous strains in the cubic-phase GaN films grown on GaAs (001) by metalorganic chemical vapor deposition
Xu, DP; Wang, YT; Yang, H; Li, SF; Zhao, DG; Fu, Y; Zhang, SM; Wu, RH; Jia, QJ; Zheng, WL; Jiang, XM; Jia QJ(贾全杰); Zheng WL(郑文莉); Jiang XM(姜晓明)
2000
发表期刊JOURNAL OF APPLIED PHYSICS
卷号88期号:6页码:3762-3764
通讯作者Chinese Acad Sci, Inst Semicond, Natl Res Ctr Optoelect Technol, Beijing 100083, Peoples R China ; Chinese Acad Sci, Inst High Energy Phys, Beijing 100083, Peoples R China
摘要Strains in cubic GaN films grown on GaAs (001) were measured by a triple-axis x-ray diffraction method. Residual strains in the as-grown epitaxial films were in compression, contrary to the predicted tensile strains caused by large lattice mismatch between epilayers and GaAs substrates (20%). It was also found that the relief of strains in the GaN films has a complicated dependence on the growth conditions. We interpreted this as the interaction between the lattice mismatch and thermal mismatch stresses. The fully relaxed lattice constants of cubic GaN are determined to be 4.5038 +/- 0.0009 Angstrom, which is in excellent agreement with the theoretical prediction of 4.503 Angstrom. (C) 2000 American Institute of Physics. [S0021-8979(00)07918-4].
文章类型Article
学科领域Physics
研究领域[WOS]Physics
DOI10.1063/1.1288779
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语种英语
WOS类目Physics, Applied
WOS记录号WOS:000089034700095
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被引频次:6[WOS]   [WOS记录]     [WOS相关记录]
文献类型期刊论文
条目标识符http://ir.ihep.ac.cn/handle/311005/239936
专题多学科研究中心
实验物理中心
中国科学院高能物理研究所_人力资源处
作者单位中国科学院高能物理研究所
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Xu, DP,Wang, YT,Yang, H,et al. Anomalous strains in the cubic-phase GaN films grown on GaAs (001) by metalorganic chemical vapor deposition[J]. JOURNAL OF APPLIED PHYSICS,2000,88(6):3762-3764.
APA Xu, DP.,Wang, YT.,Yang, H.,Li, SF.,Zhao, DG.,...&姜晓明.(2000).Anomalous strains in the cubic-phase GaN films grown on GaAs (001) by metalorganic chemical vapor deposition.JOURNAL OF APPLIED PHYSICS,88(6),3762-3764.
MLA Xu, DP,et al."Anomalous strains in the cubic-phase GaN films grown on GaAs (001) by metalorganic chemical vapor deposition".JOURNAL OF APPLIED PHYSICS 88.6(2000):3762-3764.
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