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Two-photon-absorption-induced nonlinear photoresponse in GaAs/AlGaAs quantum-well infrared photodetectors
Jiang, J; Fu, Y; Li, N; Chen, XS; Zhen, HL; Lu, W; Wang, MK; Yang, XP; Wu, G; Fan, YH; Li, YG; Wang MK(王鸣凯); Yang XP(杨学平); Wu G(吴钢); Fan YH(范耀辉); Li YG(李永贵)
2004
发表期刊APPLIED PHYSICS LETTERS
卷号85期号:16页码:3614-3616
通讯作者Chinese Acad Sci, Natl Lab Infrared Phys, Shanghai Inst Tech Phys, Shanghai 200083, Peoples R China ; Chinese Acad Sci, Free Elect Laser Lab, Inst High Energy Phys, Beijing 100080, Peoples R China
文章类型Article
摘要Using a free-electron laser(FEL) source, we have studied the two-photon-absorption (TPA) effect in GaAs/AlGaAs quantum-well infrared photodetector (QWIP). The TPA-induced photoresponse in QWIPs has been measured under different FEL excitation power by the photoconductivity method. The effective-mass approximation theory is used for the QWIP structure to explain the photoresponse behavior. It is demonstrated that the TPA-induced photocarrier density is proportional to the square of the excitation power. Based on the experimental results, the TPA coefficients of QWIPs were obtained to be 0.0045, 0.0030, 0.0103, and 0.0061 cm/MW for the excitation lines of 10.6, 10.7, 11.9 and 13.2 mum, respectively. The dependence the TPA coefficients on the excitation wavelength is explained by our theoretical model. (C) 2004 American Institute of Physics.
学科领域Physics
DOI10.1063/1.1781732
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语种英语
WOS研究方向Physics
WOS类目Physics, Applied
WOS记录号WOS:000224658100092
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文献类型期刊论文
条目标识符http://ir.ihep.ac.cn/handle/311005/239926
专题多学科研究中心
实验物理中心
加速器中心
作者单位中国科学院高能物理研究所
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Jiang, J,Fu, Y,Li, N,et al. Two-photon-absorption-induced nonlinear photoresponse in GaAs/AlGaAs quantum-well infrared photodetectors[J]. APPLIED PHYSICS LETTERS,2004,85(16):3614-3616.
APA Jiang, J.,Fu, Y.,Li, N.,Chen, XS.,Zhen, HL.,...&李永贵.(2004).Two-photon-absorption-induced nonlinear photoresponse in GaAs/AlGaAs quantum-well infrared photodetectors.APPLIED PHYSICS LETTERS,85(16),3614-3616.
MLA Jiang, J,et al."Two-photon-absorption-induced nonlinear photoresponse in GaAs/AlGaAs quantum-well infrared photodetectors".APPLIED PHYSICS LETTERS 85.16(2004):3614-3616.
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