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Lattice strains and composition of self-organized Ge dots grown on Si(001)
Jiang, ZM; Jiang XM(姜晓明); Jia QJ(贾全杰); Zheng WL(郑文莉); Xian DC(冼鼎昌); Jiang, XM; Jiang, WR; Jia, QJ; Zheng, WL; Qian, DC
刊名APPLIED PHYSICS LETTERS
2000
卷号76期号:23页码:3397-3399
学科分类Physics
DOI10.1063/1.126658
通讯作者Fudan Univ, Surface Phys Lab, Shanghai 200433, Peoples R China ; Inst High Energy Phys, Beijing Synchrotron Radiat Facil, Beijing 100039, Peoples R China
文章类型Article
英文摘要X-ray diffraction measurements at different grazing angles for self-organized Ge dots grown on Si(001) are carried out by using synchrotron radiation as a light source. The lattice parameters parallel and perpendicular to the surface are determined from the grazing angle and ordinary x-ray diffraction spectra. A 1.2% lattice constant expansion parallel to the interface and a 3.1% lattice expansion along the growth direction, as compared with the Si lattice, are found within the Ge dots. Based on the Poisson equation and the Vegard law, the Ge dot should be a partially strain relaxed SiGe alloy with the Ge content of 55%. The composition change in Ge dots is suggested to be caused by the atomic intermixing during the islanding growth. In the small grazing angle x-ray diffraction spectrum, a peak located at the higher angle side of Si(220) is observed. The origin of this peak is attributed to the near surface compressive strain in the peripheral substrate regions surrounding the Ge dots. This compressive strain is induced by the formation of Ge dots and leads to a -0.8% lattice constant change parallel to the interface. (C) 2000 American Institute of Physics. [S0003-6951(00)04123-1].
类目[WOS]Physics, Applied
研究领域[WOS]Physics
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语种英语
WOS记录号WOS:000087554500021
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被引频次:53[WOS]   [WOS记录]     [WOS相关记录]
文献类型期刊论文
条目标识符http://ir.ihep.ac.cn/handle/311005/239905
专题院士_期刊论文
中国科学院高能物理研究所_人力资源处
作者单位中国科学院高能物理研究所
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Jiang, ZM,Jiang XM,Jia QJ,et al. Lattice strains and composition of self-organized Ge dots grown on Si(001)[J]. APPLIED PHYSICS LETTERS,2000,76(23):3397-3399.
APA Jiang, ZM.,姜晓明.,贾全杰.,郑文莉.,冼鼎昌.,...&Qian, DC.(2000).Lattice strains and composition of self-organized Ge dots grown on Si(001).APPLIED PHYSICS LETTERS,76(23),3397-3399.
MLA Jiang, ZM,et al."Lattice strains and composition of self-organized Ge dots grown on Si(001)".APPLIED PHYSICS LETTERS 76.23(2000):3397-3399.
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