Crystallization control of sputtered Ta2O5 thin films by substrate bias
Huang, AP; Xu, SL; Zhu, MK; Wang, B; Yan, H; Liu, T; Liu T(刘涛)
刊名APPLIED PHYSICS LETTERS
2003
卷号83期号:16页码:3278-3280
学科分类Physics
DOI10.1063/1.1610247
通讯作者Beijing Univ Technol, China Minist Educ, Key Lab Adv Funct Mat, Beijing 100022, Peoples R China ; Chinese Acad Sci, Inst High Energy Phys, Beijing Synchrotron Radiat Facil, Beijing 100039, Peoples R China
文章类型Article
英文摘要This letter reports that, by applying a bias to Si substrates, crystalline tantalum pentoxide (Ta2O5) thin films were fabricated at low substrate temperatures. At 620 degreesC, it was found that the thin films as-prepared are amorphous without the bias and of high crystallinity with the bias over -100 V. Based on the present data, it is concluded that the crystallinity of the thin films is improved with increasing bias. Furthermore, when the bias was increased to -200 V, partially crystallized films could be attained at temperatures as low as 400 degreesC. The bias effect on the crystallization is attributed to the interaction of positive ions in the plasma with the growing surface. (C) 2003 American Institute of Physics.
类目[WOS]Physics, Applied
研究领域[WOS]Physics
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语种英语
WOS记录号WOS:000185954400016
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被引频次:30[WOS]   [WOS记录]     [WOS相关记录]
文献类型期刊论文
条目标识符http://ir.ihep.ac.cn/handle/311005/239889
专题中国科学院高能物理研究所_多学科研究中心_期刊论文
作者单位中国科学院高能物理研究所
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Huang, AP,Xu, SL,Zhu, MK,et al. Crystallization control of sputtered Ta2O5 thin films by substrate bias[J]. APPLIED PHYSICS LETTERS,2003,83(16):3278-3280.
APA Huang, AP.,Xu, SL.,Zhu, MK.,Wang, B.,Yan, H.,...&刘涛.(2003).Crystallization control of sputtered Ta2O5 thin films by substrate bias.APPLIED PHYSICS LETTERS,83(16),3278-3280.
MLA Huang, AP,et al."Crystallization control of sputtered Ta2O5 thin films by substrate bias".APPLIED PHYSICS LETTERS 83.16(2003):3278-3280.
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