Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China
; Wuhan Univ, Dept Phys, Wuhan 430072, Peoples R China
; CAS, Inst High Energy Phys, Lab Nucl Analyt Tech, Beijing 100039, Peoples R China
; CAS, Inst High Energy Phys, Beijing Synchotron Radiat Facil, Beijing 100039, Peoples R China
Both cracked and crack-free GaN/Al0.55Ga0.45N multiple quantum wells (MQWs) grown on GaN template by metalorganic chemical vapor deposition have been studied by triple-axis X-ray diffraction, grazing-incidence X-ray reflectivity, atomic force microscope, photoluminescence spectroscopy and low-energy positron annihilation spectroscopy. The experimental results show that cracks generation not only deteriorates the surface morphology, but also leads to a period dispersion and roughens the interfaces of MQWs. The mean density of dislocations in MQWs, determined from the average full-width at half-maximum of to-scan of each satellite peak, has been significantly enhanced by the cracks generation. Furthermore, the measurement of annihilation-line Doppler broadening reveals a higher concentration of negatively charged vacancies in the cracked MQWs. The combination of these vacancies and the high density of edge dislocations are assumed to contribute to the highly enhanced yellow luminescence in the cracked sample. (c) 2005 Elsevier B.V. All rights reserved.
Sun, Q,Zhang, JC,Huang, Y,et al. Influence of cracks generation on the structural and optical properties of GaN/Al0.55Ga0.45N multiple quantum wells[J]. APPLIED SURFACE SCIENCE,2006,252(8):3043-3050.
Sun, Q.,Zhang, JC.,Huang, Y.,Chen, J.,Wang, JF.,...&贾全杰.(2006).Influence of cracks generation on the structural and optical properties of GaN/Al0.55Ga0.45N multiple quantum wells.APPLIED SURFACE SCIENCE,252(8),3043-3050.
Sun, Q,et al."Influence of cracks generation on the structural and optical properties of GaN/Al0.55Ga0.45N multiple quantum wells".APPLIED SURFACE SCIENCE 252.8(2006):3043-3050.