Interfacial structure of molecular beam epitaxial grown cubic-GaN films on GaAs(001) probed by x-ray gazing-angle specular reflection

doi:10.1063/1.123986

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	Interfacial structure of molecular beam epitaxial grown cubic-GaN films on GaAs(001) probed by x-ray gazing-angle specular reflection
	Li, JH; Chen, H; Cai, LC; Cui, SF; Yu, WX; Zhou, JM; Huang, Q; Mai, ZH; Zheng, WL; Jia, QJ; Zheng WL(郑文莉); Jia QJ(贾全杰)
	1999
发表期刊	APPLIED PHYSICS LETTERS
卷号	74 期号:20 页码:2981-2983
通讯作者	Chinese Acad Sci, Inst Phys, Beijing 100080, Peoples R China ; Chinese Acad Sci, Ctr Condensed Matter Phys, Beijing 100080, Peoples R China ; Chinese Acad Sci, Inst High Energy Phys, Beijing Synchrotron Rad Facil, Beijing 100039, Peoples R China
文章类型	Article
摘要	We report on a study of interfacial structure of GaN films grown on GaAs(001) substrates by plasma-assisted molecular beam epitaxy using x-ray grazing-angle specular reflection. We show that interfacial layers with electron densities differing from those of GaN and GaAs were formed upon deposition of GaN. It is also found that the interfacial structure of our systems depends strongly on the course of the initial layer deposition. The phase purity of the GaN films was examined by x-ray reciprocal space mapping. A simple kinetic growth model suggested by our results has been presented. (C) 1999 American Institute of Physics. [S0003-6951(99)01920-8].
学科领域	Physics
研究领域[WOS]	Physics ; Physics
DOI	10.1063/1.123986
URL	查看原文
语种	英语
研究领域[WOS]	Physics ; Physics
WOS类目	Physics, Applied
WOS记录号	WOS:000080352700025
引用统计	被引频次：9[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.ihep.ac.cn/handle/311005/239852
专题	多学科研究中心加速器中心中国科学院高能物理研究所_人力资源处中国科学院高能物理研究所_中国散裂中子源核技术应用研究中心
作者单位	中国科学院高能物理研究所
推荐引用方式 GB/T 7714	Li, JH,Chen, H,Cai, LC,et al. Interfacial structure of molecular beam epitaxial grown cubic-GaN films on GaAs(001) probed by x-ray gazing-angle specular reflection[J]. APPLIED PHYSICS LETTERS,1999,74(20):2981-2983.
APA	Li, JH.,Chen, H.,Cai, LC.,Cui, SF.,Yu, WX.,...&贾全杰.(1999).Interfacial structure of molecular beam epitaxial grown cubic-GaN films on GaAs(001) probed by x-ray gazing-angle specular reflection.APPLIED PHYSICS LETTERS,74(20),2981-2983.
MLA	Li, JH,et al."Interfacial structure of molecular beam epitaxial grown cubic-GaN films on GaAs(001) probed by x-ray gazing-angle specular reflection".APPLIED PHYSICS LETTERS 74.20(1999):2981-2983.

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