Interfacial structure of molecular beam epitaxial grown cubic-GaN films on GaAs(001) probed by x-ray gazing-angle specular reflection
Li, JH; Chen, H; Cai, LC; Cui, SF; Yu, WX; Zhou, JM; Huang, Q; Mai, ZH; Zheng, WL; Jia, QJ; Zheng WL(郑文莉); Jia QJ(贾全杰)
刊名APPLIED PHYSICS LETTERS
1999
卷号74期号:20页码:2981-2983
学科分类Physics
DOI10.1063/1.123986
通讯作者Chinese Acad Sci, Inst Phys, Beijing 100080, Peoples R China ; Chinese Acad Sci, Ctr Condensed Matter Phys, Beijing 100080, Peoples R China ; Chinese Acad Sci, Inst High Energy Phys, Beijing Synchrotron Rad Facil, Beijing 100039, Peoples R China
文章类型Article
英文摘要We report on a study of interfacial structure of GaN films grown on GaAs(001) substrates by plasma-assisted molecular beam epitaxy using x-ray grazing-angle specular reflection. We show that interfacial layers with electron densities differing from those of GaN and GaAs were formed upon deposition of GaN. It is also found that the interfacial structure of our systems depends strongly on the course of the initial layer deposition. The phase purity of the GaN films was examined by x-ray reciprocal space mapping. A simple kinetic growth model suggested by our results has been presented. (C) 1999 American Institute of Physics. [S0003-6951(99)01920-8].
类目[WOS]Physics, Applied
研究领域[WOS]Physics
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语种英语
WOS记录号WOS:000080352700025
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被引频次:9[WOS]   [WOS记录]     [WOS相关记录]
文献类型期刊论文
条目标识符http://ir.ihep.ac.cn/handle/311005/239852
专题中国科学院高能物理研究所_多学科研究中心_期刊论文
中国科学院高能物理研究所_加速器中心
中国科学院高能物理研究所_人力资源处
中国科学院高能物理研究所_中国散裂中子源
中国科学院高能物理研究所_核技术应用研究中心
作者单位中国科学院高能物理研究所
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Li, JH,Chen, H,Cai, LC,et al. Interfacial structure of molecular beam epitaxial grown cubic-GaN films on GaAs(001) probed by x-ray gazing-angle specular reflection[J]. APPLIED PHYSICS LETTERS,1999,74(20):2981-2983.
APA Li, JH.,Chen, H.,Cai, LC.,Cui, SF.,Yu, WX.,...&贾全杰.(1999).Interfacial structure of molecular beam epitaxial grown cubic-GaN films on GaAs(001) probed by x-ray gazing-angle specular reflection.APPLIED PHYSICS LETTERS,74(20),2981-2983.
MLA Li, JH,et al."Interfacial structure of molecular beam epitaxial grown cubic-GaN films on GaAs(001) probed by x-ray gazing-angle specular reflection".APPLIED PHYSICS LETTERS 74.20(1999):2981-2983.
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