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The formation and evolution of vacancy-type defects in Ar-implanted silicon studied by slow-positron annihilation spectroscopy
Li, BS; Zhang, CH; Zhong YR(钟玉荣); Wang DN(王丹妮); Zhong, YR; Wang, DN; Zhou, LH; Yang, YT; Zhang, HH; Zhang, LQ
2009
发表期刊NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
卷号267期号:14页码:2395-2398
通讯作者[Li, B. S. ; Zhang, C. H. ; Zhou, L. H. ; Yang, Y. T. ; Zhang, H. H. ; Zhang, L. Q.] Chinese Acad Sci, Inst Modern Phys, Lanzhou 730000, Peoples R China ; [Zhong, Y. R. ; Wang, D. N.] Acad Sinica, Inst High Energy Phys, Key Lab Nucl Anal Tech, Beijing 100039, Peoples R China
摘要The Doppler broadening spectrum of a silicon wafer was measured using a variable-energy positron beam to investigate the effects of vacancy-type defects induced by 180 keV Ar ion implantation. The S-parameter in the damaged layer decreases with annealing temperature up to 673 K, and then increases with annealing temperature from 673 to 1373 K. At low annealing temperatures ranging from room temperature to 673 K, argon-decorated vacancies are formed by argon atoms combining with open-volume defects at inactive positron sites. With further increase of annealing temperature, argon-decorated vacancies dissociate and subsequently migrate and coalesce, leading to an increase of S-parameter. Furthermore, the buried vacancy-layer becomes narrow with increasing annealing temperature. At 1373 K, the buried vacancy-layer moved towards the sample surface. (C) 2009 Elsevier B.V. All rights reserved.
文章类型Article
关键词Silicon Ion implantation Vacancy-type defects Doppler broadening Annealing
学科领域Instruments & Instrumentation; Nuclear Science & Technology; Physics
DOI10.1016/j.nimb.2009.05.004
研究领域[WOS]Instruments & Instrumentation ; Nuclear Science & Technology ; Physics
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语种英语
WOS类目Instruments & Instrumentation ; Nuclear Science & Technology ; Physics, Atomic, Molecular & Chemical ; Physics, Nuclear
WOS记录号WOS:000268268000012
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被引频次:5[WOS]   [WOS记录]     [WOS相关记录]
文献类型期刊论文
条目标识符http://ir.ihep.ac.cn/handle/311005/239741
专题多学科研究中心
作者单位中国科学院高能物理研究所
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Li, BS,Zhang, CH,Zhong YR,et al. The formation and evolution of vacancy-type defects in Ar-implanted silicon studied by slow-positron annihilation spectroscopy[J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS,2009,267(14):2395-2398.
APA Li, BS.,Zhang, CH.,钟玉荣.,王丹妮.,Zhong, YR.,...&Zhang, LQ.(2009).The formation and evolution of vacancy-type defects in Ar-implanted silicon studied by slow-positron annihilation spectroscopy.NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS,267(14),2395-2398.
MLA Li, BS,et al."The formation and evolution of vacancy-type defects in Ar-implanted silicon studied by slow-positron annihilation spectroscopy".NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS 267.14(2009):2395-2398.
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