The formation and evolution of vacancy-type defects in Ar-implanted silicon studied by slow-positron annihilation spectroscopy
Li, BS; Zhang, CH; Zhong YR(钟玉荣); Wang DN(王丹妮); Zhong, YR; Wang, DN; Zhou, LH; Yang, YT; Zhang, HH; Zhang, LQ
刊名NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
2009
卷号267期号:14页码:2395-2398
关键词Silicon Ion implantation Vacancy-type defects Doppler broadening Annealing
学科分类Instruments & Instrumentation; Nuclear Science & Technology; Physics
DOI10.1016/j.nimb.2009.05.004
通讯作者[Li, B. S. ; Zhang, C. H. ; Zhou, L. H. ; Yang, Y. T. ; Zhang, H. H. ; Zhang, L. Q.] Chinese Acad Sci, Inst Modern Phys, Lanzhou 730000, Peoples R China ; [Zhong, Y. R. ; Wang, D. N.] Acad Sinica, Inst High Energy Phys, Key Lab Nucl Anal Tech, Beijing 100039, Peoples R China
文章类型Article
英文摘要The Doppler broadening spectrum of a silicon wafer was measured using a variable-energy positron beam to investigate the effects of vacancy-type defects induced by 180 keV Ar ion implantation. The S-parameter in the damaged layer decreases with annealing temperature up to 673 K, and then increases with annealing temperature from 673 to 1373 K. At low annealing temperatures ranging from room temperature to 673 K, argon-decorated vacancies are formed by argon atoms combining with open-volume defects at inactive positron sites. With further increase of annealing temperature, argon-decorated vacancies dissociate and subsequently migrate and coalesce, leading to an increase of S-parameter. Furthermore, the buried vacancy-layer becomes narrow with increasing annealing temperature. At 1373 K, the buried vacancy-layer moved towards the sample surface. (C) 2009 Elsevier B.V. All rights reserved.
类目[WOS]Instruments & Instrumentation ; Nuclear Science & Technology ; Physics, Atomic, Molecular & Chemical ; Physics, Nuclear
研究领域[WOS]Instruments & Instrumentation ; Nuclear Science & Technology ; Physics
原文出处查看原文
语种英语
WOS记录号WOS:000268268000012
引用统计
被引频次:4[WOS]   [WOS记录]     [WOS相关记录]
文献类型期刊论文
条目标识符http://ir.ihep.ac.cn/handle/311005/239741
专题中国科学院高能物理研究所_多学科研究中心_期刊论文
作者单位中国科学院高能物理研究所
推荐引用方式
GB/T 7714
Li, BS,Zhang, CH,Zhong YR,et al. The formation and evolution of vacancy-type defects in Ar-implanted silicon studied by slow-positron annihilation spectroscopy[J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS,2009,267(14):2395-2398.
APA Li, BS.,Zhang, CH.,钟玉荣.,王丹妮.,Zhong, YR.,...&Zhang, LQ.(2009).The formation and evolution of vacancy-type defects in Ar-implanted silicon studied by slow-positron annihilation spectroscopy.NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS,267(14),2395-2398.
MLA Li, BS,et al."The formation and evolution of vacancy-type defects in Ar-implanted silicon studied by slow-positron annihilation spectroscopy".NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS 267.14(2009):2395-2398.
条目包含的文件
文件名称/大小 文献类型 版本类型 开放类型 使用许可
7091.pdf(254KB)期刊论文作者接受稿开放获取CC BY-NC-SA浏览 请求全文
个性服务
推荐该条目
保存到收藏夹
查看访问统计
导出为Endnote文件
谷歌学术
谷歌学术中相似的文章
[Li, BS]的文章
[Zhang, CH]的文章
[钟玉荣]的文章
百度学术
百度学术中相似的文章
[Li, BS]的文章
[Zhang, CH]的文章
[钟玉荣]的文章
必应学术
必应学术中相似的文章
[Li, BS]的文章
[Zhang, CH]的文章
[钟玉荣]的文章
相关权益政策
暂无数据
收藏/分享
文件名: 7091.pdf
格式: Adobe PDF
所有评论 (0)
暂无评论
 

除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。