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Rapid annealing study of neutron-irradiated GaAs by Rutherford backscattering spectrometry/channeling
Liu, J; Wang, PX
1999
发表期刊JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
卷号17期号:5页码:2040-2044
通讯作者Chinese Acad Sci, Inst High Energy Phys, Beijing 100080, Peoples R China ; Univ Sci & Technol Beijing, Dept Mat Phys, Beijing 100083, Peoples R China
文章类型Article
摘要The behavior of GaAs crystals irradiated with neutrons of various fluence has been investigated using Rutherford backscattering spectrometry/channeling. The results show that the neutron irradiation (from 10(14) to 10(17) n/cm(2)) has little effect on the critical angle (Psi(1/2)). During annealing, the rate of lattice reordering increases with the temperature rising. For the fluence of 10(15) n/cm2, the activation energy of defect annihilation E-1 = 0.35 eV, which may be attributed to the recombination of vacancies with migrating interstitials. The activation energy E-2 = 0.13 eV for the neutron fluence of 10(17) n/cm(2) may. probably, correspond to the recombination of vacancies with interstitials in the most neighborhoods. (C) 1999 American Vacuum Society. [S0734-211X(99)00705-2].
学科领域Engineering; Science & Technology - Other Topics; Physics
研究领域[WOS]Engineering ; Science & Technology - Other Topics ; Physics ; Engineering ; Science & Technology - Other Topics ; Physics
DOI10.1116/1.590868
URL查看原文
语种英语
研究领域[WOS]Engineering ; Science & Technology - Other Topics ; Physics ; Engineering ; Science & Technology - Other Topics ; Physics
WOS类目Engineering, Electrical & Electronic ; Nanoscience & Nanotechnology ; Physics, Applied
WOS记录号WOS:000083129900025
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文献类型期刊论文
条目标识符http://ir.ihep.ac.cn/handle/311005/239631
专题多学科研究中心
作者单位中国科学院高能物理研究所
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Liu, J,Wang, PX. Rapid annealing study of neutron-irradiated GaAs by Rutherford backscattering spectrometry/channeling[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B,1999,17(5):2040-2044.
APA Liu, J,&Wang, PX.(1999).Rapid annealing study of neutron-irradiated GaAs by Rutherford backscattering spectrometry/channeling.JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B,17(5),2040-2044.
MLA Liu, J,et al."Rapid annealing study of neutron-irradiated GaAs by Rutherford backscattering spectrometry/channeling".JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B 17.5(1999):2040-2044.
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