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Microstructural features of DC sputtered vanadium oxide thin films
Pan MX(潘梦霄); Cao XZ(曹兴忠); Wang BY(王宝义); Ma CX(马创新); Zhou CL(周春兰); Wei L(魏龙); Pan, MX; Cao, XZ; Li, YX; Wang, BY; Xue, DS; Ma, CX; Zhou, CL; Wei, L
Corresponding AuthorChinese Acad Sci, Inst High Energy Phys, Key Lab Nucl Anal Tech, Beijing 100039, Peoples R China ; Hebei Univ Technol, Inst Mat Sci & Engn, Tianjin 300130, Peoples R China ; Lanzhou Univ, Key Lab Magnetism & Magnet Mat, Minist Educ, Lanzhou 730000, Peoples R China
AbstractV2O5 thin films with a preferred orientation were deposited on Si (100) substrate by reactive dc magnetron sputtering. The surface morphology and structural features were studied by XRD, SEM and FTIR to ensure the growth of V2O5 films. These investigations revealed that the chemical composition and the orientation of the films were affected by the oxygen partial pressure. Nano-grain V2O5 films can be grown with a layered structure at oxygen partial pressure of 0.4Pa. V2O5 film could be converted to (001) oriented VO2 film after vacuum annealing process.
Keywordmicrostructure thin films of vanadium oxides preferred orientation DC magnetron sputtering
Subject AreaPhysics
WOS Research AreaPhysics
WOS SubjectPhysics, Multidisciplinary
WOS IDWOS:000221946200063
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Document Type期刊论文
First Author AffilicationInstitute of High Energy
Recommended Citation
GB/T 7714
Pan MX,Cao XZ,Wang BY,et al. Microstructural features of DC sputtered vanadium oxide thin films[J]. ACTA PHYSICA SINICA,2004,53(6):1956-1960.
APA 潘梦霄.,曹兴忠.,王宝义.,马创新.,周春兰.,...&Wei, L.(2004).Microstructural features of DC sputtered vanadium oxide thin films.ACTA PHYSICA SINICA,53(6),1956-1960.
MLA 潘梦霄,et al."Microstructural features of DC sputtered vanadium oxide thin films".ACTA PHYSICA SINICA 53.6(2004):1956-1960.
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