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Influence of annealing conditions of ZnO films on the properties of ZnS films prepared by sulfurizing ZnO films
Wang BY(王宝义); Zhang RG(张仁刚); Zhang H(张辉); Wan DY(万冬云); Wei L(魏龙); Wang, BY; Zhang, RG; Hui, Z; Wan, DY; Long, W
2005
发表期刊ACTA PHYSICA SINICA
卷号54期号:4页码:1874-1878
通讯作者Chinese Acad Sci, Inst High Energy Phys, Beijing 100049, Peoples R China
文章类型Article
摘要ZnS films are prepared on glass and quartz substrates by suffidation of the ZnO films which are deposited via reactive magnetron sputtering and annealed under various conditions. The sulfurized films are characterized by using x-ray diffraction, scanning electron microscope and UV-VIS spectrometer. The results show that the crystalline structure and optical properties of the sutfurized films depend on the annealing conditions. ZnO films annealed in vacuum and pure O-2 atmosphere, respectively, are converted partially to the hexagonal ZnS, while the annealed ZnO films in air and pure N-2, respectively, are converted totally to ZnS. Also the ZnS films produced by sulfurizing the annealed ZnO films in air and pure N-2, respectively, have a high optical transmittance of about 80% at the wavelength of 400-800 nm, with the band-gap energies of 3.66 and 3.61 eV, respectively.
关键词ZnS films magnetron sputtering sulfidation of ZnO solar cells
学科领域Physics
研究领域[WOS]Physics ; Physics
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语种英语
研究领域[WOS]Physics ; Physics
WOS类目Physics, Multidisciplinary
WOS记录号WOS:000228510600073
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被引频次:3[WOS]   [WOS记录]     [WOS相关记录]
文献类型期刊论文
条目标识符http://ir.ihep.ac.cn/handle/311005/239562
专题多学科研究中心
作者单位中国科学院高能物理研究所
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Wang BY,Zhang RG,Zhang H,et al. Influence of annealing conditions of ZnO films on the properties of ZnS films prepared by sulfurizing ZnO films[J]. ACTA PHYSICA SINICA,2005,54(4):1874-1878.
APA 王宝义.,张仁刚.,张辉.,万冬云.,魏龙.,...&Long, W.(2005).Influence of annealing conditions of ZnO films on the properties of ZnS films prepared by sulfurizing ZnO films.ACTA PHYSICA SINICA,54(4),1874-1878.
MLA 王宝义,et al."Influence of annealing conditions of ZnO films on the properties of ZnS films prepared by sulfurizing ZnO films".ACTA PHYSICA SINICA 54.4(2005):1874-1878.
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