| Investigation of the acceptor and donor in fast neutron irradiated Czochralski silicon |
| Li, YX; Yang, S; Chen, GF; Ma, QY; Niu, PJ; Chen, DF; Li, HT; Wang, BY; Wang BY(王宝义)
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| 2005
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| 发表期刊 | ACTA PHYSICA SINICA
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| 卷号 | 54期号:4页码:1783-1787 |
| 通讯作者 | Hebei Univ Technol, Sch Mat Sci & Engn, Tianjin 300130, Peoples R China
; Tianjin Polytech Inst, Sch Informat & Commun, Tianjin 300160, Peoples R China
; China Inst Atom Energy, Beijing 102413, Peoples R China
; Chinese Acad Sci, Inst High Energy Phys, Beijing 100049, Peoples R China
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| 文章类型 | Article
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| 摘要 | Variations of the irradiated defects, resistivity, carrier mobility ratio and carrier concentration in high-dose neutron-irradiated n-type Czoehralski silicon have been investigated by means of Fourier transform infrared spectrometer, positron annihilation spectroscopy and Hall effect. After irradiated with fast neutron, the sample transformed from n to p-type. Two types of acceptor centers that contribute to the V2O2, V2O, VO2, V-O-V and V-4 -type defects will appear after annealing at temperature of 450 and 600 degrees C, respectively. After annealing at temperatures above 650 degrees C, with the elimination of acceptors, the carrier mobility ratio and the carrier-type began to recover and a type of donor related to the irradiated defects will appear. The effective annealing temperature is 750 degrees C at which the donor is formed, and annealing above 900 degrees C for I It will eliminate the donor. |
| 关键词 | fast neutron irradiation
vacancy-type defects
acceptor
donor
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| 学科领域 | Physics
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| 研究领域[WOS] | Physics
; Physics
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| URL | 查看原文
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| 语种 | 英语
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| 研究领域[WOS] | Physics
; Physics
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| WOS类目 | Physics, Multidisciplinary
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| WOS记录号 | WOS:000228510600056
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| 引用统计 |
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| 文献类型 | 期刊论文
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| 条目标识符 | http://ir.ihep.ac.cn/handle/311005/239523
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| 专题 | 多学科研究中心
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| 作者单位 | 中国科学院高能物理研究所
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推荐引用方式
GB/T 7714 |
Li, YX,Yang, S,Chen, GF,et al. Investigation of the acceptor and donor in fast neutron irradiated Czochralski silicon[J]. ACTA PHYSICA SINICA,2005,54(4):1783-1787.
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| APA |
Li, YX.,Yang, S.,Chen, GF.,Ma, QY.,Niu, PJ.,...&王宝义.(2005).Investigation of the acceptor and donor in fast neutron irradiated Czochralski silicon.ACTA PHYSICA SINICA,54(4),1783-1787.
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| MLA |
Li, YX,et al."Investigation of the acceptor and donor in fast neutron irradiated Czochralski silicon".ACTA PHYSICA SINICA 54.4(2005):1783-1787.
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