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Investigation of the acceptor and donor in fast neutron irradiated Czochralski silicon
Li, YX; Yang, S; Chen, GF; Ma, QY; Niu, PJ; Chen, DF; Li, HT; Wang, BY; Wang BY(王宝义)
2005
发表期刊ACTA PHYSICA SINICA
卷号54期号:4页码:1783-1787
通讯作者Hebei Univ Technol, Sch Mat Sci & Engn, Tianjin 300130, Peoples R China ; Tianjin Polytech Inst, Sch Informat & Commun, Tianjin 300160, Peoples R China ; China Inst Atom Energy, Beijing 102413, Peoples R China ; Chinese Acad Sci, Inst High Energy Phys, Beijing 100049, Peoples R China
文章类型Article
摘要Variations of the irradiated defects, resistivity, carrier mobility ratio and carrier concentration in high-dose neutron-irradiated n-type Czoehralski silicon have been investigated by means of Fourier transform infrared spectrometer, positron annihilation spectroscopy and Hall effect. After irradiated with fast neutron, the sample transformed from n to p-type. Two types of acceptor centers that contribute to the V2O2, V2O, VO2, V-O-V and V-4 -type defects will appear after annealing at temperature of 450 and 600 degrees C, respectively. After annealing at temperatures above 650 degrees C, with the elimination of acceptors, the carrier mobility ratio and the carrier-type began to recover and a type of donor related to the irradiated defects will appear. The effective annealing temperature is 750 degrees C at which the donor is formed, and annealing above 900 degrees C for I It will eliminate the donor.
关键词fast neutron irradiation vacancy-type defects acceptor donor
学科领域Physics
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语种英语
WOS研究方向Physics
WOS类目Physics, Multidisciplinary
WOS记录号WOS:000228510600056
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文献类型期刊论文
条目标识符http://ir.ihep.ac.cn/handle/311005/239523
专题多学科研究中心
作者单位中国科学院高能物理研究所
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Li, YX,Yang, S,Chen, GF,et al. Investigation of the acceptor and donor in fast neutron irradiated Czochralski silicon[J]. ACTA PHYSICA SINICA,2005,54(4):1783-1787.
APA Li, YX.,Yang, S.,Chen, GF.,Ma, QY.,Niu, PJ.,...&王宝义.(2005).Investigation of the acceptor and donor in fast neutron irradiated Czochralski silicon.ACTA PHYSICA SINICA,54(4),1783-1787.
MLA Li, YX,et al."Investigation of the acceptor and donor in fast neutron irradiated Czochralski silicon".ACTA PHYSICA SINICA 54.4(2005):1783-1787.
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