Hebei Univ Technol, Sch Mat Sci & Engn, Tianjin 300130, Peoples R China
; Tianjin Polytech Inst, Sch Informat & Commun, Tianjin 300160, Peoples R China
; China Inst Atom Energy, Beijing 102413, Peoples R China
; Chinese Acad Sci, Inst High Energy Phys, Beijing 100049, Peoples R China
Variations of the irradiated defects, resistivity, carrier mobility ratio and carrier concentration in high-dose neutron-irradiated n-type Czoehralski silicon have been investigated by means of Fourier transform infrared spectrometer, positron annihilation spectroscopy and Hall effect. After irradiated with fast neutron, the sample transformed from n to p-type. Two types of acceptor centers that contribute to the V2O2, V2O, VO2, V-O-V and V-4 -type defects will appear after annealing at temperature of 450 and 600 degrees C, respectively. After annealing at temperatures above 650 degrees C, with the elimination of acceptors, the carrier mobility ratio and the carrier-type began to recover and a type of donor related to the irradiated defects will appear. The effective annealing temperature is 750 degrees C at which the donor is formed, and annealing above 900 degrees C for I It will eliminate the donor.