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High Temperature Transport Property of Copper site Doped La2CuO4
Xu W(徐伟); Chen DL(陈栋梁); Wu ZH(吴忠华); Xie YN(谢亚宁); Wu ZY(吴自玉); Xu, W; Liu, Y; Chen, DL; Lin, YH; Wu, ZH; Xie, YN; Zhang, BP; Cheng, B; Nan, CW; Wu, ZY
Corresponding Author[Xu, Wei ; Chen, Dongliang ; Wu, Zhonghua ; Xie, Yaning ; Wu, Ziyu] Chinese Acad Sci, Inst High Energy Phys, Beijing 100049, Peoples R China ; [Liu, Yong ; Lin, Yuan-Hua ; Nan, Ce-Wen] Tsinghua Univ, Dept Mat Sci & Engn, State Key Lab New Ceram & Fine Proc, Beijing 100084, Peoples R China ; [Liu, Yong] Univ Sci & Technol Beijing, Sch Met & Ecol Engn, Beijing 100083, Peoples R China ; [Zhang, Bo-Ping] Univ Sci & Technol Beijing, Sch Mat Sci & Engn, Beijing 100083, Peoples R China ; [Cheng, Bo] Inst Aeronaut Mat, Lab Struct Steel Funct Mat & Heat Treatment Proc, Beijing 100095, Peoples R China ; [Wu, Ziyu] Univ Sci & Technol China, Natl Synchrotron Radiat Lab, Hefei 230026, Peoples R China
AbstractThe transport properties of p-type polycrystalline La2Cu1-xMxO4 (MCo and Mn) have been investigated in the high temperature domain above room temperature up to 973 K. The electrical resistivity of La2Cu1-xMxO4 undergoes a temperature driven semiconducting (insulating) to metallic transition at high temperature (similar to 750 K) and a doping induced metal to semiconductor transition at room temperature. The Arrhenius plot of the ln(rho/T) similar to 1/T shows a conducting mechanism and in the La2Cu1-xMxO4 (M:Co and Mn) a transition temperature was found at around 750 K similar to what was observed in the La2-xRExCuO4 (RE: Pr, Nd and Y) system. We therefore suggest that in these doped ceramics the metal-insulator (semiconductor) transition at similar to 750 K should be attributed to combined effects of a strong phonon scattering mechanism due to thermal activation, oxygen vacancies and structural disorders. Furthermore, a site-dependent influence of electrical resistivity in La2CuO4-based ceramics was distinguished by combining thermoelectric measurements and X-ray absorption spectroscopy. The doping induced transition is then associated with large imperfections present in the CuO2 layer, consistent with a dominant role of the single CuO2 layer in the charge transport mechanism of La2CuO4-based materials.
Subject AreaMaterials Science
Indexed BySCI
WOS Research AreaMaterials Science
WOS SubjectMaterials Science, Ceramics
WOS IDWOS:000290530200032
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Document Type期刊论文
First Author AffilicationInstitute of High Energy
Recommended Citation
GB/T 7714
Xu W,Chen DL,Wu ZH,et al. High Temperature Transport Property of Copper site Doped La2CuO4[J]. JOURNAL OF THE AMERICAN CERAMIC SOCIETY,2011,94(5):1471-1476.
APA 徐伟.,陈栋梁.,吴忠华.,谢亚宁.,吴自玉.,...&Wu, ZY.(2011).High Temperature Transport Property of Copper site Doped La2CuO4.JOURNAL OF THE AMERICAN CERAMIC SOCIETY,94(5),1471-1476.
MLA 徐伟,et al."High Temperature Transport Property of Copper site Doped La2CuO4".JOURNAL OF THE AMERICAN CERAMIC SOCIETY 94.5(2011):1471-1476.
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