Research on AlInGaN Quaternary Alloys as MQW Barriers in GaN-Based Laser Diodes
Chen, WH; Liao, H; Hu, XD; Li, R; Jia, QJ; Jin, YH; Du, WM; Yang, ZJ; Zhang, GY; Jia QJ(贾全杰)
刊名SPECTROSCOPY AND SPECTRAL ANALYSIS
2009
卷号29期号:6页码:1441-1444
关键词GaN-based LD Multi-quantum-well (MQW) AlInGaN Barrier material
学科分类Spectroscopy
DOI10.3964/j.issn.1000-0593(2009)06-1441-04
通讯作者[Jin Yuan-hao ; Du Wei-min] Peking Univ, Sch Phys, Inst Modern Opt, Beijing 100871, Peoples R China ; [Chen Wei-hua ; Liao Hui ; Hu Xiao-dong ; Li Rui ; Yang Zhi-jian ; Zhang Guo-yi] Peking Univ, State Key Lab Mesoscop Phys, Beijing 100871, Peoples R China ; [Jia Quan-jie] Chinese Acad Sci, Inst High Energy Phys, Beijing 100039, Peoples R China
文章类型Article
英文摘要InGaN/GaN, InGaN/InGaN and InGaN/AlInGaN multi-quantum-well (MQW) laser diodes (LDs) were grown on (0001) sapphire substrate by metalorganic chemical vapor deposition (MOCVD). The GaN (0002) synchrotron X-ray diffraction (XRD), electroluminescence (EL) and optical power-current (L-I) measurement reveal that AlInGaN quaternary alloys as barriers in MQWs can improve the crystal quality, optical emission performance, threshold current and slope efficiency of the laser diode structure to a large extent compared with other barriers. The relevant mechanisms are that: 1. The Al component increases the barrier height of the MQWs so that more current carriers will be caught in. 2. The In component counteracts the strain in the MQWs that decreases the dislocations and defects, thereby the nonradiative recombination centers are decreased. 3. The In component decreases the piezoelectric electric field that makes the electrons and the holes recombine more easily.
类目[WOS]Spectroscopy
研究领域[WOS]Spectroscopy
原文出处查看原文
语种英语
WOS记录号WOS:000266681400001
引用统计
文献类型期刊论文
条目标识符http://ir.ihep.ac.cn/handle/311005/239355
专题中国科学院高能物理研究所_多学科研究中心_期刊论文
作者单位中国科学院高能物理研究所
推荐引用方式
GB/T 7714
Chen, WH,Liao, H,Hu, XD,et al. Research on AlInGaN Quaternary Alloys as MQW Barriers in GaN-Based Laser Diodes[J]. SPECTROSCOPY AND SPECTRAL ANALYSIS,2009,29(6):1441-1444.
APA Chen, WH.,Liao, H.,Hu, XD.,Li, R.,Jia, QJ.,...&贾全杰.(2009).Research on AlInGaN Quaternary Alloys as MQW Barriers in GaN-Based Laser Diodes.SPECTROSCOPY AND SPECTRAL ANALYSIS,29(6),1441-1444.
MLA Chen, WH,et al."Research on AlInGaN Quaternary Alloys as MQW Barriers in GaN-Based Laser Diodes".SPECTROSCOPY AND SPECTRAL ANALYSIS 29.6(2009):1441-1444.
条目包含的文件
文件名称/大小 文献类型 版本类型 开放类型 使用许可
6548.pdf(952KB)期刊论文作者接受稿开放获取CC BY-NC-SA浏览 请求全文
个性服务
推荐该条目
保存到收藏夹
查看访问统计
导出为Endnote文件
谷歌学术
谷歌学术中相似的文章
[Chen, WH]的文章
[Liao, H]的文章
[Hu, XD]的文章
百度学术
百度学术中相似的文章
[Chen, WH]的文章
[Liao, H]的文章
[Hu, XD]的文章
必应学术
必应学术中相似的文章
[Chen, WH]的文章
[Liao, H]的文章
[Hu, XD]的文章
相关权益政策
暂无数据
收藏/分享
文件名: 6548.pdf
格式: Adobe PDF
所有评论 (0)
暂无评论
 

除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。