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Research on AlInGaN Quaternary Alloys as MQW Barriers in GaN-Based Laser Diodes
Chen, WH; Liao, H; Hu, XD; Li, R; Jia, QJ; Jin, YH; Du, WM; Yang, ZJ; Zhang, GY; Jia QJ(贾全杰)
2009
发表期刊SPECTROSCOPY AND SPECTRAL ANALYSIS
卷号29期号:6页码:1441-1444
通讯作者[Jin Yuan-hao ; Du Wei-min] Peking Univ, Sch Phys, Inst Modern Opt, Beijing 100871, Peoples R China ; [Chen Wei-hua ; Liao Hui ; Hu Xiao-dong ; Li Rui ; Yang Zhi-jian ; Zhang Guo-yi] Peking Univ, State Key Lab Mesoscop Phys, Beijing 100871, Peoples R China ; [Jia Quan-jie] Chinese Acad Sci, Inst High Energy Phys, Beijing 100039, Peoples R China
文章类型Article
摘要InGaN/GaN, InGaN/InGaN and InGaN/AlInGaN multi-quantum-well (MQW) laser diodes (LDs) were grown on (0001) sapphire substrate by metalorganic chemical vapor deposition (MOCVD). The GaN (0002) synchrotron X-ray diffraction (XRD), electroluminescence (EL) and optical power-current (L-I) measurement reveal that AlInGaN quaternary alloys as barriers in MQWs can improve the crystal quality, optical emission performance, threshold current and slope efficiency of the laser diode structure to a large extent compared with other barriers. The relevant mechanisms are that: 1. The Al component increases the barrier height of the MQWs so that more current carriers will be caught in. 2. The In component counteracts the strain in the MQWs that decreases the dislocations and defects, thereby the nonradiative recombination centers are decreased. 3. The In component decreases the piezoelectric electric field that makes the electrons and the holes recombine more easily.
关键词GaN-based LD Multi-quantum-well (MQW) AlInGaN Barrier material
学科领域Spectroscopy
研究领域[WOS]Spectroscopy ; Spectroscopy
DOI10.3964/j.issn.1000-0593(2009)06-1441-04
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语种英语
研究领域[WOS]Spectroscopy ; Spectroscopy
WOS类目Spectroscopy
WOS记录号WOS:000266681400001
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文献类型期刊论文
条目标识符http://ir.ihep.ac.cn/handle/311005/239355
专题多学科研究中心
作者单位中国科学院高能物理研究所
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GB/T 7714
Chen, WH,Liao, H,Hu, XD,et al. Research on AlInGaN Quaternary Alloys as MQW Barriers in GaN-Based Laser Diodes[J]. SPECTROSCOPY AND SPECTRAL ANALYSIS,2009,29(6):1441-1444.
APA Chen, WH.,Liao, H.,Hu, XD.,Li, R.,Jia, QJ.,...&贾全杰.(2009).Research on AlInGaN Quaternary Alloys as MQW Barriers in GaN-Based Laser Diodes.SPECTROSCOPY AND SPECTRAL ANALYSIS,29(6),1441-1444.
MLA Chen, WH,et al."Research on AlInGaN Quaternary Alloys as MQW Barriers in GaN-Based Laser Diodes".SPECTROSCOPY AND SPECTRAL ANALYSIS 29.6(2009):1441-1444.
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