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Characterization of implantation induced defects in si-implanted SiO2 film
Hao XP(郝小鹏); Zhou CL(周春兰); Yu RS(于润升); Wang BY(王宝义); Wei L(魏龙); Hao, XP; Zhou, CL; Yu, RS; Wang, BY; Wei, L
2008
发表期刊JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY
卷号8期号:3页码:1350-1354
通讯作者[Hao, Xiaopeng ; Zhou, Chunlan ; Yu, Runsheng ; Wang, Baoyi ; Wei, Long] Chinese Acad Sci, Inst High Energy Phys, Key Lab Nucl Anal Tech, Beijing 100049, Peoples R China ; [Hao, Xiaopeng] Chinese Acad Sci, Grad Sch, Beijing 100039, Peoples R China
文章类型Article
摘要Si-implanted thermal SiO2 layers and their annealing behaviour were investigated. In the results of variable-energy positron annihilation spectroscopy, the defects caused by ion implantation are manifested as a particularly low S parameter in the Si ion implantation region of the SiO2 layer. Compared with Fourier transform infrared measurements, it suggests that the decrease of the line shape S parameter after implantation is related to the compaction of implanted layers induced by the breaking of the SiO2 network structure. The presence of blue band emission (430-470 nm) in the implanted SiO2 layer is associated with neutral oxygen vacancy. An increase of the S parameter in the implanted layers is observed after annealing at different temperatures, but it is impossible completely recover the pre-implantation condition after a thermal treatment.
关键词positron annihilation spectroscopy ion implantation defects densification effect
学科领域Chemistry; Science & Technology - Other Topics; Materials Science; Physics
研究领域[WOS]Chemistry ; Science & Technology - Other Topics ; Materials Science ; Physics ; Chemistry ; Science & Technology - Other Topics ; Materials Science ; Physics
DOI10.1166/jnn.2008.327
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语种英语
研究领域[WOS]Chemistry ; Science & Technology - Other Topics ; Materials Science ; Physics ; Chemistry ; Science & Technology - Other Topics ; Materials Science ; Physics
WOS类目Chemistry, Multidisciplinary ; Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary ; Physics, Applied ; Physics, Condensed Matter
WOS记录号WOS:000254540700048
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被引频次:1[WOS]   [WOS记录]     [WOS相关记录]
文献类型期刊论文
条目标识符http://ir.ihep.ac.cn/handle/311005/239311
专题多学科研究中心
作者单位中国科学院高能物理研究所
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Hao XP,Zhou CL,Yu RS,et al. Characterization of implantation induced defects in si-implanted SiO2 film[J]. JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY,2008,8(3):1350-1354.
APA 郝小鹏.,周春兰.,于润升.,王宝义.,魏龙.,...&Wei, L.(2008).Characterization of implantation induced defects in si-implanted SiO2 film.JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY,8(3),1350-1354.
MLA 郝小鹏,et al."Characterization of implantation induced defects in si-implanted SiO2 film".JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY 8.3(2008):1350-1354.
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