; Wang XueJin
; Liu YuYing] China Agr Univ, Coll Sci, Beijing 100083, Peoples R China
; [Chen LiangChen
; Jin ChangQing] Chinese Acad Sci, Inst Phys, Beijing 100080, Peoples R China
; [Liu Jing] Chinese Acad Sci, Inst High Energy Phys, Beijing 100039, Peoples R China
Boron-doped diamond has been synthesized from graphite mixed with different ratio of B(4)C at high pressure high temperature (HPHT) using laser heated diamond anvil cell. The starting composition was transformed to diamond compound at pressure similar to 9 GPa, 2300-2400 K as indicated by the in-situ X-ray diffraction pattern with synchrotron radiation source. Raman spectrum of the recovered specimen from HPHT state confirmed that boron has been doped into diamond lattice.