Mosaic structure evolution in GaN films with annealing time grown by metalorganic chemical vapour deposition
Chen, ZT; Xu, K; Guo LP(郭立平); Guo, LP; Yang, ZJ; Pan, YB; Su, YY; Zhang, H; Shen, B; Zhang, GY
刊名CHINESE PHYSICS LETTERS
2006
卷号23期号:5页码:1257-1260
学科分类Physics
通讯作者Peking Univ, Sch Phys, Beijing 100871, Peoples R China ; Peking Univ, State Key Lab Artificial Microstruct & Mesoscop P, Beijing 100871, Peoples R China ; Peking Univ, Res Ctr Wide Band Semicond, Beijing 100871, Peoples R China ; Chinese Acad Sci, Inst High Energy Phys, Beijing Synchrotron Radiat Facil, Beijing 100049, Peoples R China
文章类型Article
英文摘要We investigate mosaic structure evolution of GaN films annealed for a long time at 800 degrees C grown on sapphire substrates by metalorganic chemical vapour deposition by high-resolution x-ray diffraction. The result show that residual stress in GaN films is relaxed by generating edge-type threading dislocations (TDs) instead of screw-type TDs. Compared to as-grown GaN films, the annealed ones have larger mean twist angles corresponding to higher density of edge-type TDs but smaller mean tilt angles corresponding to lower density of screw-type TDs films. Due to the increased edge-type TD density, the lateral coherence lengths of the annealed GaN films also decrease. The results obtained from chemical etching experiment and grazing-incidence x-ray diffraction (GIXRD) also support the proposed structure evolution.
类目[WOS]Physics, Multidisciplinary
研究领域[WOS]Physics
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语种英语
WOS记录号WOS:000237551700053
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被引频次:1[WOS]   [WOS记录]     [WOS相关记录]
文献类型期刊论文
条目标识符http://ir.ihep.ac.cn/handle/311005/239232
专题中国科学院高能物理研究所_多学科研究中心_期刊论文
作者单位中国科学院高能物理研究所
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Chen, ZT,Xu, K,Guo LP,et al. Mosaic structure evolution in GaN films with annealing time grown by metalorganic chemical vapour deposition[J]. CHINESE PHYSICS LETTERS,2006,23(5):1257-1260.
APA Chen, ZT.,Xu, K.,郭立平.,Guo, LP.,Yang, ZJ.,...&Zhang, GY.(2006).Mosaic structure evolution in GaN films with annealing time grown by metalorganic chemical vapour deposition.CHINESE PHYSICS LETTERS,23(5),1257-1260.
MLA Chen, ZT,et al."Mosaic structure evolution in GaN films with annealing time grown by metalorganic chemical vapour deposition".CHINESE PHYSICS LETTERS 23.5(2006):1257-1260.
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