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Temperature dependence of the formation of nano-scale indium clusters in InAlGaN alloys on Si(111) substrates
Wu, JJ; Li, JM; Cong, GW; Wei, HY; Zhang, PF; Hu, WG; Liu, XL; Zhu, QS; Wang, ZG; Jia, QJ; Gu, LP; Jia QJ(贾全杰); Guo LP(郭丽萍)
2006
发表期刊NANOTECHNOLOGY
卷号17期号:5页码:1251-1254
通讯作者Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China ; Chinese Acad Sci, Inst High Energy Phys, Beijing 100039, Peoples R China
文章类型Article
摘要The temperature dependence of the formation of nano-scale indium clusters in InAlGaN quaternary alloys, which are grown by metalorganic chemical vapour deposition on GaN/Si(111) epilayers, is investigated. Firm evidence is provided to support the existence of phase separation, or nano-scale In-rich clusters, by the combined results of high-resolution transmission electron microscopy (HRTEM), high-resolution x-ray diffraction (HRXRD) and micro-Raman spectra. The results of HRXRD and Raman spectra indicate that the degree of phase separation is strong and the number of In clusters in the InAlGaN layers on silicon substrate is higher at lower growth temperatures than that at higher growth temperatures, which limits the In and Al incorporated into the InAlGaN quaternary alloys. The detailed mechanism of luminescence in this system is studied by low temperature photoluminescence (LT-PL). We conclude that the ultraviolet (UV) emission observed in the quaternary InAlGaN alloys arises from the matrix of a random alloy, and the second emission peak in the blue-green region results from the nano-scale indium clusters.
学科领域Science & Technology - Other Topics; Materials Science; Physics
研究领域[WOS]Science & Technology - Other Topics ; Materials Science ; Physics ; Science & Technology - Other Topics ; Materials Science ; Physics
DOI10.1088/0957-4484/17/5/015
URL查看原文
语种英语
研究领域[WOS]Science & Technology - Other Topics ; Materials Science ; Physics ; Science & Technology - Other Topics ; Materials Science ; Physics
WOS类目Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary ; Physics, Applied
WOS记录号WOS:000236496400023
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被引频次:13[WOS]   [WOS记录]     [WOS相关记录]
文献类型期刊论文
条目标识符http://ir.ihep.ac.cn/handle/311005/239228
专题多学科研究中心
作者单位中国科学院高能物理研究所
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GB/T 7714
Wu, JJ,Li, JM,Cong, GW,et al. Temperature dependence of the formation of nano-scale indium clusters in InAlGaN alloys on Si(111) substrates[J]. NANOTECHNOLOGY,2006,17(5):1251-1254.
APA Wu, JJ.,Li, JM.,Cong, GW.,Wei, HY.,Zhang, PF.,...&郭丽萍.(2006).Temperature dependence of the formation of nano-scale indium clusters in InAlGaN alloys on Si(111) substrates.NANOTECHNOLOGY,17(5),1251-1254.
MLA Wu, JJ,et al."Temperature dependence of the formation of nano-scale indium clusters in InAlGaN alloys on Si(111) substrates".NANOTECHNOLOGY 17.5(2006):1251-1254.
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