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Study of Ge thin heterostructures by synchrotron radiation X-ray reflection
Zheng WL(郑文莉); Jia QJ(贾全杰); Jiang XM(姜晓明); Zheng, WL; Jia, QJ; Jiang, XM; Jiang, ZM
2001
发表期刊HIGH ENERGY PHYSICS AND NUCLEAR PHYSICS-CHINESE EDITION
卷号25期号:12页码:1231-1237
通讯作者Chinese Acad Sci, Inst High Energy Phys, Beijing 100039, Peoples R China ; Fudan Univ, Surface Phys Lab, Shanghai 200433, Peoples R China
摘要Synchrotron radiation X-ray reflection method is used to study the depth distribution of Ge atoms in Si crystals caused by surface segregation during the MBE growth. The distribution of Ge atoms in Si crystal is found to have asymmetric exponential shape by simulating the experimental reflectivity based on X-ray reflection theory and Parratt method. The distribution decay lengths forward and backward along the growth direction are obtained as 8 Angstrom and 3 Angstrom, respectively, and do not change with different thicknesses of the Ge layers. The influences on X-ray reflectivity of different parameters, such as the thickness of the Si cap layer, the decay length, the surface roughness, and the thickness of SiO2 over the surface are discussed briefly.
文章类型Article
关键词heterostructure synchrotron radiation x-ray reflectivity surface segregation
学科领域Physics
研究领域[WOS]Physics
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语种英语
WOS类目Physics, Nuclear ; Physics, Particles & Fields
WOS记录号WOS:000172849500016
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被引频次:1[WOS]   [WOS记录]     [WOS相关记录]
文献类型期刊论文
条目标识符http://ir.ihep.ac.cn/handle/311005/239214
专题多学科研究中心
中国科学院高能物理研究所_人力资源处
作者单位中国科学院高能物理研究所
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GB/T 7714
Zheng WL,Jia QJ,Jiang XM,et al. Study of Ge thin heterostructures by synchrotron radiation X-ray reflection[J]. HIGH ENERGY PHYSICS AND NUCLEAR PHYSICS-CHINESE EDITION,2001,25(12):1231-1237.
APA 郑文莉.,贾全杰.,姜晓明.,Zheng, WL.,Jia, QJ.,...&Jiang, ZM.(2001).Study of Ge thin heterostructures by synchrotron radiation X-ray reflection.HIGH ENERGY PHYSICS AND NUCLEAR PHYSICS-CHINESE EDITION,25(12),1231-1237.
MLA 郑文莉,et al."Study of Ge thin heterostructures by synchrotron radiation X-ray reflection".HIGH ENERGY PHYSICS AND NUCLEAR PHYSICS-CHINESE EDITION 25.12(2001):1231-1237.
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