Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China
; Chinese Acad Sci, Inst High Energy Phys, Beijing 100039, Peoples R China
The effects of In doped low-temperature (LT) AlGaN interlayer on the properties of GaN/Si(111) by MOCVD have been investigated. Using In doping LT-interlayer can decrease the stress sufficiently for avoiding crack formation in a thick (2.0 mu m) GaN layer. Significant improvement in the crystal and optical properties of GaN layer is also achieved. In doping is observed to reduce the stress in AlGaN interlayer measured by high-resolution X-ray diffraction (HRXRD). It can provide more compressive stress to counteract tensile stress and reduce crack density in subsequent GaN layer. Moreover, as a surfactant, indium is observed to cause an enhanced PL intensity and the narrowed linewidths of PL and XRD spectra for the LT-interlayer. Additionally, the crystal quality of GaN layer is found to be dependent on the growth parameters of underneath In-doped LT-AlGaN interlayer. The optimal parameters, such as TMIn flow rate, TMAl flow rates and thickness, are achieved to obtain nearly 2.0 mu m thick crack free GaN film with advanced optical and crystal properties. (c) 2005 Elsevier B.V. All rights reserved.
Wu, JJ,Han, XX,Li, JM,et al. Crack control in GaN grown on silicon (111) using In doped low-temperature AlGaN interlayer by metalorganic chemical vapor deposition[J]. OPTICAL MATERIALS,2006,28(10):1227-1231.
Wu, JJ.,Han, XX.,Li, JM.,Wei, HY.,Cong, GW.,...&王焕华.(2006).Crack control in GaN grown on silicon (111) using In doped low-temperature AlGaN interlayer by metalorganic chemical vapor deposition.OPTICAL MATERIALS,28(10),1227-1231.
Wu, JJ,et al."Crack control in GaN grown on silicon (111) using In doped low-temperature AlGaN interlayer by metalorganic chemical vapor deposition".OPTICAL MATERIALS 28.10(2006):1227-1231.