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Crack control in GaN grown on silicon (111) using In doped low-temperature AlGaN interlayer by metalorganic chemical vapor deposition
Wu, JJ; Han, XX; Li, JM; Wei, HY; Cong, GW; Liu, XL; Zhu, QS; Wang, ZG; Jia, QJ; Guo, LP; Hu, TD; Wang, HH; Jia QJ(贾全杰); Guo LP(郭立平); Hu TD(胡天斗); Wang HH(王焕华)
2006
发表期刊OPTICAL MATERIALS
卷号28期号:10页码:1227-1231
通讯作者Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China ; Chinese Acad Sci, Inst High Energy Phys, Beijing 100039, Peoples R China
文章类型Article
摘要The effects of In doped low-temperature (LT) AlGaN interlayer on the properties of GaN/Si(111) by MOCVD have been investigated. Using In doping LT-interlayer can decrease the stress sufficiently for avoiding crack formation in a thick (2.0 mu m) GaN layer. Significant improvement in the crystal and optical properties of GaN layer is also achieved. In doping is observed to reduce the stress in AlGaN interlayer measured by high-resolution X-ray diffraction (HRXRD). It can provide more compressive stress to counteract tensile stress and reduce crack density in subsequent GaN layer. Moreover, as a surfactant, indium is observed to cause an enhanced PL intensity and the narrowed linewidths of PL and XRD spectra for the LT-interlayer. Additionally, the crystal quality of GaN layer is found to be dependent on the growth parameters of underneath In-doped LT-AlGaN interlayer. The optimal parameters, such as TMIn flow rate, TMAl flow rates and thickness, are achieved to obtain nearly 2.0 mu m thick crack free GaN film with advanced optical and crystal properties. (c) 2005 Elsevier B.V. All rights reserved.
关键词in doping cracks Si(111) substrate LT-AlGaN interlayer metalorganic chemical vapor deposition GaN
学科领域Materials Science; Optics
研究领域[WOS]Materials Science ; Optics ; Materials Science ; Optics
DOI10.1016/j.optmat.2005.08.004
URL查看原文
语种英语
研究领域[WOS]Materials Science ; Optics ; Materials Science ; Optics
WOS类目Materials Science, Multidisciplinary ; Optics
WOS记录号WOS:000238884000017
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文献类型期刊论文
条目标识符http://ir.ihep.ac.cn/handle/311005/239205
专题多学科研究中心
作者单位中国科学院高能物理研究所
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Wu, JJ,Han, XX,Li, JM,et al. Crack control in GaN grown on silicon (111) using In doped low-temperature AlGaN interlayer by metalorganic chemical vapor deposition[J]. OPTICAL MATERIALS,2006,28(10):1227-1231.
APA Wu, JJ.,Han, XX.,Li, JM.,Wei, HY.,Cong, GW.,...&王焕华.(2006).Crack control in GaN grown on silicon (111) using In doped low-temperature AlGaN interlayer by metalorganic chemical vapor deposition.OPTICAL MATERIALS,28(10),1227-1231.
MLA Wu, JJ,et al."Crack control in GaN grown on silicon (111) using In doped low-temperature AlGaN interlayer by metalorganic chemical vapor deposition".OPTICAL MATERIALS 28.10(2006):1227-1231.
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