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Photoelectron diffraction study on the polarity of GaN surface
Xu, PS; Deng, R; Pan, HB; Xu, FQ; Xie, CK; Li, YH; Liu, FQ; Yibulaxin, K; Liu FQ(刘凤琴); Kui RX(奎热西)
2004
发表期刊ACTA PHYSICA SINICA
卷号53期号:4页码:1171-1176
通讯作者Univ Sci & Technol China, Natl Synchrotron Radiat Lab, Hefei 230029, Peoples R China ; Chinese Acad Sci, Inst High Energy Phys, Beijing Synchrotron Radiat Lab, Beijing 100039, Peoples R China
文章类型Article
摘要We have obtained the photoelectron diffraction curves from (10 (1) over bar0) and (11 (2) over bar0) crystal planes on GaN (0001) surface by using a polar scan mode of x-ray photoelectron diffraction (XPD). On the basis of principle of "forward focusing" of XPD, we have determined that its polarity is Ga termination. The polarity of GaN (0001) surface is also studied by using, energy dependence photoelectron diffraction called angle-resolved photoemission extended fine structure, as well as the calculation of multiple scattering cluster models, which confirmed that its polarity is Ga termination.
关键词GaN surface polarity photoelectron diffraction
学科领域Physics
研究领域[WOS]Physics ; Physics
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语种英语
研究领域[WOS]Physics ; Physics
WOS类目Physics, Multidisciplinary
WOS记录号WOS:000220534100036
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被引频次:4[WOS]   [WOS记录]     [WOS相关记录]
文献类型期刊论文
条目标识符http://ir.ihep.ac.cn/handle/311005/239138
专题多学科研究中心
作者单位中国科学院高能物理研究所
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Xu, PS,Deng, R,Pan, HB,et al. Photoelectron diffraction study on the polarity of GaN surface[J]. ACTA PHYSICA SINICA,2004,53(4):1171-1176.
APA Xu, PS.,Deng, R.,Pan, HB.,Xu, FQ.,Xie, CK.,...&奎热西.(2004).Photoelectron diffraction study on the polarity of GaN surface.ACTA PHYSICA SINICA,53(4),1171-1176.
MLA Xu, PS,et al."Photoelectron diffraction study on the polarity of GaN surface".ACTA PHYSICA SINICA 53.4(2004):1171-1176.
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