Investigation of microstructures of AlAs oxides before and after oxidation
Wang, Y; Jia, HQ; Mai, ZH; Jia, QJ; Jiang, XM; Jia QJ(贾全杰); Jiang XM(姜晓明)
刊名CHINESE PHYSICS LETTERS
2004
卷号21期号:6页码:1128-1130
学科分类Physics
通讯作者Chinese Acad Sci, Inst Phys, Beijing 100080, Peoples R China ; Beijing Synchrotron Radiat, Inst High Energy Phys, Beijing 100039, Peoples R China
文章类型Article
英文摘要The effect of lateral oxidation on microstructures of the GaAs/AlAs/GaAs heterostructure was studied by x-ray specular reflectivity, nonspecular scattering and diffraction. The GaAs/Al2O3/GaAs multilayer was obtained after oxidation of the GaAs/AlAs/GaAs sample. The results show that, before oxidation, there are two 40-Angstrom-thick intermixing layers, one located between the AlAs sublayer and the GaAs substrate, and the other between the AlAs sublayer and the upper GaAs sublayer. After oxidation, these two intermixing sublayers disappear. The AlAs was oxidized into amorphous Al2O3 totally. The surface and interface roughnesses of the sample also decrease after oxidation.
类目[WOS]Physics, Multidisciplinary
研究领域[WOS]Physics
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语种英语
WOS记录号WOS:000222202100042
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文献类型期刊论文
条目标识符http://ir.ihep.ac.cn/handle/311005/239091
专题中国科学院高能物理研究所_多学科研究中心_期刊论文
作者单位中国科学院高能物理研究所
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Wang, Y,Jia, HQ,Mai, ZH,et al. Investigation of microstructures of AlAs oxides before and after oxidation[J]. CHINESE PHYSICS LETTERS,2004,21(6):1128-1130.
APA Wang, Y.,Jia, HQ.,Mai, ZH.,Jia, QJ.,Jiang, XM.,...&姜晓明.(2004).Investigation of microstructures of AlAs oxides before and after oxidation.CHINESE PHYSICS LETTERS,21(6),1128-1130.
MLA Wang, Y,et al."Investigation of microstructures of AlAs oxides before and after oxidation".CHINESE PHYSICS LETTERS 21.6(2004):1128-1130.
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