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Basal plane bending of 6H-SiC single crystals observed by synchrotron radiation X-ray topography
Ning, LN; Hu, XB; Huang WX(黄万霞); Yuan QX(袁清习); Wang, YM; Xu, XG; Gao, YQ; Peng, Y; Chen, XF; Huang, WX; Yuan, QX
2009
发表期刊JOURNAL OF APPLIED CRYSTALLOGRAPHY
卷号42页码:1068-1072
通讯作者[Ning, Lina ; Hu, Xiaobo ; Wang, Yingmin ; Xu, Xiangang ; Gao, Yuqiang ; Peng, Yan ; Chen, Xiufang] Shandong Univ, State Key Lab Crystal Mat, Jinan 250100, Peoples R China ; [Ning, Lina] Jiaxing Univ, Mech & Elect Engn Coll, Jiaxing 314000, Peoples R China ; [Huang, Wanxia ; Yuan, Qingxi] Inst High Energy Phys, Beijing Synchrotron Radiat Lab, Beijing 100039, Peoples R China
文章类型Article
摘要Basal plane bending is a structural defect in SiC single crystals caused mainly by the thermal mismatch between seed and holder, which deteriorates the quality of the wafers and blocks their applications. In this paper, basal plane bending was detected by high-resolution X-ray diffractometry (HRXRD) and transmission synchrotron white-beam X-ray topography (SWBXT). HRXRD reveals that the (0001) Si face is a concave sphere and SWBXT shows that the shapes of the Laue spots are different from that of the cross section of the synchrotron radiation beam. On the basis of a spherical curvature model for a (0001) 6H-SiC single crystal, the shapes of the Laue spots were simulated. The results are in good agreement with the experimental observations. Thus, SWBXT is an effective method for detecting basal plane bending.
学科领域Crystallography
研究领域[WOS]Crystallography ; Crystallography
DOI10.1107/S002188980904196X
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语种英语
研究领域[WOS]Crystallography ; Crystallography
WOS类目Crystallography
WOS记录号WOS:000271895700013
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被引频次:2[WOS]   [WOS记录]     [WOS相关记录]
文献类型期刊论文
条目标识符http://ir.ihep.ac.cn/handle/311005/238988
专题多学科研究中心
作者单位中国科学院高能物理研究所
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Ning, LN,Hu, XB,Huang WX,et al. Basal plane bending of 6H-SiC single crystals observed by synchrotron radiation X-ray topography[J]. JOURNAL OF APPLIED CRYSTALLOGRAPHY,2009,42:1068-1072.
APA Ning, LN.,Hu, XB.,黄万霞.,袁清习.,Wang, YM.,...&Yuan, QX.(2009).Basal plane bending of 6H-SiC single crystals observed by synchrotron radiation X-ray topography.JOURNAL OF APPLIED CRYSTALLOGRAPHY,42,1068-1072.
MLA Ning, LN,et al."Basal plane bending of 6H-SiC single crystals observed by synchrotron radiation X-ray topography".JOURNAL OF APPLIED CRYSTALLOGRAPHY 42(2009):1068-1072.
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