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Improving light extraction of InGaN-based light emitting diodes with a roughened p-GaN surface using CsCl nano-islands
Wei, TB; Kong, QF; Wang, JX; Li, J; Zeng, YP; Wang, GH; Li, JM; Liao, YX; Yi, FT; Liao YX(廖元勋); Yi FT(伊福廷)
2011
发表期刊OPTICS EXPRESS
卷号19期号:2页码:1065-1071
通讯作者[Wei, Tongbo ; Kong, Qingfeng ; Wang, Junxi ; Li, Jing ; Zeng, Yiping ; Wang, Guohong ; Li, Jinmin] Chinese Acad Sci, Inst Semicond, Semicond Lighting Technol Res & Dev Ctr, Beijing 100083, Peoples R China ; [Liao, Yuanxun ; Yi, Futing] Chinese Acad Sci, Inst High Energy Phys, Beijing 100049, Peoples R China
文章类型Article
摘要InGaN-based light emitting diodes (LEDs) with a top nano-roughened p-GaN surface are fabricated using self-assembled CsCl nano-islands as etch masks. Following formation of hemispherical GaN nano-island arrays, electroluminescence (EL) spectra of roughened LEDs display an obvious redshift due to partial compression release in quantum wells through Inductively Coupled Plasma (ICP) etching. At a 350-mA current, the enhancement of light output power of LEDs subjected to ICP treatment with durations of 50, 150 and 250 sec compared with conventional LED have been determined to be 9.2, 70.6, and 42.3%, respectively. Additionally, the extraction enhancement factor can be further improved by increasing the size of CsCl nano-island. The economic and rapid method puts forward great potential for high performance lighting devices. (C) 2011 Optical Society of America
学科领域Optics
研究领域[WOS]Optics ; Optics
DOI10.1364/OE.19.001065
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语种英语
研究领域[WOS]Optics ; Optics
WOS类目Optics
WOS记录号WOS:000286314600066
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文献类型期刊论文
条目标识符http://ir.ihep.ac.cn/handle/311005/238985
专题多学科研究中心
中国科学院高能物理研究所_中国散裂中子源
作者单位中国科学院高能物理研究所
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Wei, TB,Kong, QF,Wang, JX,et al. Improving light extraction of InGaN-based light emitting diodes with a roughened p-GaN surface using CsCl nano-islands[J]. OPTICS EXPRESS,2011,19(2):1065-1071.
APA Wei, TB.,Kong, QF.,Wang, JX.,Li, J.,Zeng, YP.,...&伊福廷.(2011).Improving light extraction of InGaN-based light emitting diodes with a roughened p-GaN surface using CsCl nano-islands.OPTICS EXPRESS,19(2),1065-1071.
MLA Wei, TB,et al."Improving light extraction of InGaN-based light emitting diodes with a roughened p-GaN surface using CsCl nano-islands".OPTICS EXPRESS 19.2(2011):1065-1071.
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