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Evolution of structural defects in SiOx films fabricated by electron cyclotron resonance plasma chemical vapour deposition upon annealing treatment
Hao XP(郝小鹏); Wang BY(王宝义); Yu RS(于润升); Wei L(魏龙); Hao, XP; Wang, BY; Yu, RS; Wei, L; Wang, H; Zhao, DG; Hao, WC
2008
发表期刊CHINESE PHYSICS LETTERS
卷号25期号:3页码:1034-1037
通讯作者[Hao Xiao-Peng ; Wang Bao-Yi ; Yu Run-Sheng] Chinese Acad Sci, Inst High Energy Phys, Key Lab Nucl Anal Tech, Beijing 100049, Peoples R China ; [Hao Xiao-Peng] Chinese Acad Sci, Grad Sch, Beijing 100039, Peoples R China ; [Wang Hui ; Zhao De-Gang] Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China ; [Hao Wei-Chang] Beijing Univ Aeronaut & Astronaut, Sch Sci, Beijing 100083, Peoples R China
摘要We study the structural defects in the SiOx film prepared by electron cyclotron resonance plasma chemical vapour deposition and annealing recovery evolution. The photoluminescence property is observed in the as-deposited and annealed samples. [-SiO3](2-) defects are the luminescence centres of the ultraviolet photoluminescence (PL) from the Fourier transform infrared spectroscopy and PL measurements. [-SiO3](2-) is observed by positron annihilation spectroscopy, and this defect can make the S parameters increase. After 1000 degrees C annealing, [-SiO3](2-) defects still exist in the films.
文章类型Article
学科领域Physics
研究领域[WOS]Physics
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语种英语
WOS类目Physics, Multidisciplinary
WOS记录号WOS:000254124700062
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被引频次:2[WOS]   [WOS记录]     [WOS相关记录]
文献类型期刊论文
条目标识符http://ir.ihep.ac.cn/handle/311005/238927
专题多学科研究中心
作者单位中国科学院高能物理研究所
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Hao XP,Wang BY,Yu RS,et al. Evolution of structural defects in SiOx films fabricated by electron cyclotron resonance plasma chemical vapour deposition upon annealing treatment[J]. CHINESE PHYSICS LETTERS,2008,25(3):1034-1037.
APA 郝小鹏.,王宝义.,于润升.,魏龙.,Hao, XP.,...&Hao, WC.(2008).Evolution of structural defects in SiOx films fabricated by electron cyclotron resonance plasma chemical vapour deposition upon annealing treatment.CHINESE PHYSICS LETTERS,25(3),1034-1037.
MLA 郝小鹏,et al."Evolution of structural defects in SiOx films fabricated by electron cyclotron resonance plasma chemical vapour deposition upon annealing treatment".CHINESE PHYSICS LETTERS 25.3(2008):1034-1037.
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