Microstructures and strain relaxation in modulation-doped AlxGa1-xN/GaN heterostructures

doi:10.1142/S0217979204024021

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	Microstructures and strain relaxation in modulation-doped AlxGa1-xN/GaN heterostructures
	Tan, WS; Shen, B; Sha, H; Cai, HL; Wu, XS; Zheng, YD; Jiang, SS; Zheng, WL; Jia, QJ; He, Q; Zheng WL(郑文莉); Jia QJ(贾全杰); He Q(何庆)
	2004
发表期刊	INTERNATIONAL JOURNAL OF MODERN PHYSICS B (IF:0.736[JCR-2016],0.649[5-Year])
卷号	18 期号:7 页码:989-998
通讯作者	Nanjing Univ Sci & Technol, Dept Appl Phys, Nanjing 210094, Peoples R China ; Nanjing Univ, Dept Phys, Natl Lab Solid State Microstruct, Nanjing 210093, Peoples R China ; Chinese Acad Sci, Inst High Energy Phys, Beijing 1000039, Peoples R China
文章类型	Article
摘要	Modulation-doped Al0.22Ga0.78N/GaN heterostructures with various thickness of Si-doped Al0.22Ga0.78N barrier (n-AlGaN) were deposited on (0001)-oriented sapphire (alpha-Al2O3) by atmosphere-pressure metal-organic chemical vapor deposition (MOCVD). The reciprocal space mappings (RSMs) of symmetric reflection (0002) and asymmetric reflection (10714) were measured by means of the high resolution X-ray diffraction (HRXRD). The results indicate that the microstructures and the strain status of the n-AlGaN barrier correlate to those of the underlying i-GaN layer. The strained n-AlGaN barrier starts to relax when its thickness is 75 nm. It is found that there exists an "abnormal" relaxation state (the strain parameter gamma > 1) in modulation-doped Al0.22Ga0.78N/GaN heterostructures, which maybe results from-the internal defects in Al0.22Ga0.78N barrier and the strain relaxation status at the i-GaN/alpha-Al2O3 interfaces.
关键词	high resolution X-ray diffraction metal organic chemical vapor deposition reciprocal space mapping semiconducting III-V nitride strain relaxation relaxation line model
学科领域	Physics
DOI	10.1142/S0217979204024021
URL	查看原文
收录类别	ADS
语种	英语
WOS研究方向	Physics
WOS类目	Physics, Applied ; Physics, Condensed Matter ; Physics, Mathematical
WOS记录号	WOS:000222288100004
ADS Bibcode	2004IJMPB..18..989T
ADS URL	https://ui.adsabs.harvard.edu/abs/2004IJMPB..18..989T
ADS引文	https://ui.adsabs.harvard.edu/abs/2004IJMPB..18..989T/citations
引用统计	正在获取... 被引频次：1 [ADS]
文献类型	期刊论文
条目标识符	https://ir.ihep.ac.cn/handle/311005/238849
专题	多学科研究中心中国科学院高能物理研究所_人力资源处
作者单位	中国科学院高能物理研究所
第一作者单位	中国科学院高能物理研究所
推荐引用方式 GB/T 7714	Tan, WS,Shen, B,Sha, H,et al. Microstructures and strain relaxation in modulation-doped AlxGa1-xN/GaN heterostructures[J]. INTERNATIONAL JOURNAL OF MODERN PHYSICS B,2004,18(7):989-998.
APA	Tan, WS.,Shen, B.,Sha, H.,Cai, HL.,Wu, XS.,...&何庆.(2004).Microstructures and strain relaxation in modulation-doped AlxGa1-xN/GaN heterostructures.INTERNATIONAL JOURNAL OF MODERN PHYSICS B,18(7),989-998.
MLA	Tan, WS,et al."Microstructures and strain relaxation in modulation-doped AlxGa1-xN/GaN heterostructures".INTERNATIONAL JOURNAL OF MODERN PHYSICS B 18.7(2004):989-998.