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Photoluminescence study of the defects induced by neutron irradiation and rapid annealing in semi-insulating GaAs
Liu J(刘键); Liu, JA; Wang, PX
1999
发表期刊JOURNAL OF APPLIED PHYSICS
卷号86期号:2页码:764-767
通讯作者Acad Sinica, Inst High Energy Phys, Beijing 100080, Peoples R China ; Univ Sci & Technol Beijing, Dept Mat Phys, Beijing 100083, Peoples R China
文章类型Article
摘要The rapid annealing behavior of several kinds of defects in semi-insulating GaAs irradiated with various neutron fluences has been characterized using a photoluminescence technique. In this experiment, transmutation impurities form not only donors, but also acceptors, Ge-As (the 1.4783 eV peak). The intensity ratio of the 1.4783 eV peak (Ge-As) to the 1.4917 eV peak (C-As) increases with the neutron dose. This finding is consistent with the expected increase of Ge-As produced by transmutation. We also see that short time heat treatment leads to the increase of antisite defects Ga-As and of complex centers I-Ga-V-As after neutron irradiation. Based on analysis of the rapid annealing process in comparison with the regular annealing process, it is concluded that the two kinds of defects Ga-As and I-Ga-V-As are the products of defect reactions during the annealing process. (C) 1999 American Institute of Physics. [S0021-8979(99)02614-6].
学科领域Physics
DOI10.1063/1.370801
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语种英语
WOS研究方向Physics
WOS类目Physics, Applied
WOS记录号WOS:000081171800009
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被引频次:5[WOS]   [WOS记录]     [WOS相关记录]
文献类型期刊论文
条目标识符http://ir.ihep.ac.cn/handle/311005/238443
专题多学科研究中心
作者单位中国科学院高能物理研究所
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Liu J,Liu, JA,Wang, PX. Photoluminescence study of the defects induced by neutron irradiation and rapid annealing in semi-insulating GaAs[J]. JOURNAL OF APPLIED PHYSICS,1999,86(2):764-767.
APA 刘键,Liu, JA,&Wang, PX.(1999).Photoluminescence study of the defects induced by neutron irradiation and rapid annealing in semi-insulating GaAs.JOURNAL OF APPLIED PHYSICS,86(2),764-767.
MLA 刘键,et al."Photoluminescence study of the defects induced by neutron irradiation and rapid annealing in semi-insulating GaAs".JOURNAL OF APPLIED PHYSICS 86.2(1999):764-767.
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