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Effect of annealing temperature on the microstructure and scintillation properties of CsI(Tl) films
Cheng F(程峰); Zhong YR(钟玉荣); Wang BY(王宝义); Wei L(魏龙); Cheng, F; Zhong, YR; Wang, BY; Wang, TM; Wei, L
2008
Source PublicationJOURNAL OF INORGANIC MATERIALS
Volume23Issue:4Pages:749-752
Corresponding Author[Cheng Feng] Lanzhou Univ, Sch Phys Sci & Technol, Lanzhou 730000, Peoples R China ; [Cheng Feng ; Zhong Yu-Rong ; Wang Bao-Yi ; Wei Long] Chinese Acad Sci, Inst High Energy Phys, Beijing 100049, Peoples R China ; [Wang Tian-Min] Beijing Univ Aeronaut & Astronaut, Sch Sci, Beijing 100083, Peoples R China
SubtypeArticle
AbstractCsI(Tl) films were prepared by thermal evaporation and annealed at various temperatures. Structure and scintillation properties of the films were examined using X-ray diffraction, scanning electron microscope, X-ray fluorescence spectrometry, positron annihilation lifetime spectroscope and scintillation pulse height spectrometry. Results show that the CsI films are in micro-columnar structure with a preferential (200) orientation. When the sample is annealed at 150 degrees C, Tl+ ions diffuse to the sample surface. Consequently, the amount and size of the vacancy type of defects increase. However,the light yield increases a little after annealed. The samples annealed at 250 degrees C have a good crystalline state and scintillation properties. As the annealing temperature increases to 400 degrees C, the light output of the samples decreases seriously due to the dramatic change of their microstructure and the decrease of Ti+.
KeywordCsI films microstructure scintillation properties
Subject AreaMaterials Science
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Language英语
WOS Research AreaMaterials Science
WOS SubjectMaterials Science, Ceramics
WOS IDWOS:000257928900023
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Document Type期刊论文
Identifierhttp://ir.ihep.ac.cn/handle/311005/238419
Collection多学科研究中心
Affiliation中国科学院高能物理研究所
First Author AffilicationInstitute of High Energy
Recommended Citation
GB/T 7714
Cheng F,Zhong YR,Wang BY,et al. Effect of annealing temperature on the microstructure and scintillation properties of CsI(Tl) films[J]. JOURNAL OF INORGANIC MATERIALS,2008,23(4):749-752.
APA 程峰.,钟玉荣.,王宝义.,魏龙.,Cheng, F.,...&Wei, L.(2008).Effect of annealing temperature on the microstructure and scintillation properties of CsI(Tl) films.JOURNAL OF INORGANIC MATERIALS,23(4),749-752.
MLA 程峰,et al."Effect of annealing temperature on the microstructure and scintillation properties of CsI(Tl) films".JOURNAL OF INORGANIC MATERIALS 23.4(2008):749-752.
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