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Vacancy-type defects near Al surface studied by slow positron annihilation spectroscopy before and after He+ implantation
Chen, CA; Xiang, X; Sun, Y; Zhou, CL; Ma, CX; Wei, L; Wei L(魏龙)
2010
发表期刊FUSION ENGINEERING AND DESIGN
卷号85期号:5页码:734-738
通讯作者[Chen, C. A. ; Xiang, X. ; Sun, Y.] China Acad Engn Phys, Mianyang 621900, Sichuan, Peoples R China ; [Zhou, C. L. ; Ma, C. X. ; Wei, L.] Chinese Acad Sci, State Key Lab Nucl Anal, Inst High Energet Phys, Beijing 100039, Peoples R China
摘要The vacancy-type defects HenVm near Al surface before and after He+ implantation and their evolutions with annealing temperatures and aging time have been investigated by mono-energy slow positron annihilation spectroscopy (SPAS) with S parameters. The results show that many vacancies are produced during the sample preparation process, which can be re-occupied by Al atoms during annealing, Al+ and MeV He+ implantation. S parameters denote the concentration and size of HenVm clusters induced by He+ implantation in Al. The higher fluence of He implanted, the larger S parameters will be, indicating more HenVm clusters produced. S parameters decrease with the increase of annealing temperatures until the fastest change temperature, and then an opposite or minor change occurs depending on the fluence of He implanted in Al, showing that the concentration and size of HenVm clusters will vary with the annealing temperatures. Aged at RT for some time, the concentration and mean size of HenVm clusters in Al will get smaller and larger, respectively, resulting in the decrease of S parameters with the aging time. In conclusions, the evolution of vacancy-type defects HenVm near Al surface after He+ implantation depends on the annealing temperatures. He concentration and aging time. (C) 2010 Elsevier B.V. All rights reserved.
文章类型Article
关键词Al Helium Slow positron annihilation spectroscopy Vacancy-type defects
学科领域Nuclear Science & Technology
DOI10.1016/j.fusengdes.2010.04.050
研究领域[WOS]Nuclear Science & Technology
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语种英语
WOS类目Nuclear Science & Technology
WOS记录号WOS:000281489500013
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被引频次:5[WOS]   [WOS记录]     [WOS相关记录]
文献类型期刊论文
条目标识符http://ir.ihep.ac.cn/handle/311005/238385
专题多学科研究中心
作者单位中国科学院高能物理研究所
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Chen, CA,Xiang, X,Sun, Y,et al. Vacancy-type defects near Al surface studied by slow positron annihilation spectroscopy before and after He+ implantation[J]. FUSION ENGINEERING AND DESIGN,2010,85(5):734-738.
APA Chen, CA.,Xiang, X.,Sun, Y.,Zhou, CL.,Ma, CX.,...&魏龙.(2010).Vacancy-type defects near Al surface studied by slow positron annihilation spectroscopy before and after He+ implantation.FUSION ENGINEERING AND DESIGN,85(5),734-738.
MLA Chen, CA,et al."Vacancy-type defects near Al surface studied by slow positron annihilation spectroscopy before and after He+ implantation".FUSION ENGINEERING AND DESIGN 85.5(2010):734-738.
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