IHEP OpenIR  > 多学科研究中心
Upgrading design of the 3BILA beamline for x-ray nanometre lithography of microelectronic devices at BSRF
Yi FT(伊福廷); Peng LQ(彭良强); Zhang JF(张菊芳); Han Y(韩勇); Yi, FT; Ye, TC; Peng, LQ; Chen, DP; Zhang, JF; Han, Y
2004
发表期刊CHINESE PHYSICS
卷号13期号:5页码:731-736
通讯作者Chinese Acad Sci, Inst High Energy Phys, Beijing 100039, Peoples R China ; Chinese Acad Sci, Inst Microelect, Beijing 100029, Peoples R China
文章类型Article
摘要Beijing Synchrotron Radiation Facility is a partly dedicated synchrotron radiation source operated in either parasitic or dedicated mode. The 3B1A beamline, extracted from a bending magnet, was originally designed as a soft x-ray beamline for submicro x-ray lithography with critical lateral size just below 1mum in 1988 and no change has been made since it was built. But later the required resolution of x-ray lithography has changed from sub-micrometre to the nanometre in the critical lateral size. This beamline can longer more meet the requirement for x-ray nano lithography and has to be modified to fit the purpose. To upgrade the design of the 3B1A beamline for x-ray nano lithography, a mirror is used to reflect and scan the x-ray beam for the nano lithography station, but the mirror's grazing angle is changed to 27.9mrad in the vertical direction, and the convex curve needs to be modified to fit the change; the tiny change of mirror scanning angle is firstly considered to improve the uniformity of the x-ray spot on the wafer by controlling the convex curve.
关键词synchrotron radiation x-ray x-ray lithography synchrotron radiation beamline
学科领域Physics
研究领域[WOS]Physics ; Physics
URL查看原文
语种英语
研究领域[WOS]Physics ; Physics
WOS类目Physics, Multidisciplinary
WOS记录号WOS:000221271600027
引用统计
被引频次:7[WOS]   [WOS记录]     [WOS相关记录]
文献类型期刊论文
条目标识符http://ir.ihep.ac.cn/handle/311005/238377
专题多学科研究中心
作者单位中国科学院高能物理研究所
推荐引用方式
GB/T 7714
Yi FT,Peng LQ,Zhang JF,et al. Upgrading design of the 3BILA beamline for x-ray nanometre lithography of microelectronic devices at BSRF[J]. CHINESE PHYSICS,2004,13(5):731-736.
APA 伊福廷.,彭良强.,张菊芳.,韩勇.,Yi, FT.,...&Han, Y.(2004).Upgrading design of the 3BILA beamline for x-ray nanometre lithography of microelectronic devices at BSRF.CHINESE PHYSICS,13(5),731-736.
MLA 伊福廷,et al."Upgrading design of the 3BILA beamline for x-ray nanometre lithography of microelectronic devices at BSRF".CHINESE PHYSICS 13.5(2004):731-736.
条目包含的文件
文件名称/大小 文献类型 版本类型 开放类型 使用许可
5267.pdf(237KB)期刊论文作者接受稿限制开放CC BY-NC-SA请求全文
个性服务
推荐该条目
保存到收藏夹
查看访问统计
导出为Endnote文件
谷歌学术
谷歌学术中相似的文章
[伊福廷]的文章
[彭良强]的文章
[张菊芳]的文章
百度学术
百度学术中相似的文章
[伊福廷]的文章
[彭良强]的文章
[张菊芳]的文章
必应学术
必应学术中相似的文章
[伊福廷]的文章
[彭良强]的文章
[张菊芳]的文章
相关权益政策
暂无数据
收藏/分享
所有评论 (0)
暂无评论
 

除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。